Active matrix display apparatus
First Claim
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1. An active matrix display apparatus, comprising:
- a transistor, a storage capacitor, and a light-emitting element formed on a substrate,the transistor comprising a source electrode, a drain electrode, and a gate electrode,the storage capacitor having a multilayered structure of a first electrode, a dielectric layer, and a second electrode stacked in this order on the substrate, andthe light-emitting element having a multilayered structure of a third electrode, a light-emitting layer, and a fourth electrode stacked in this order on the substrate,wherein the first electrode is electrically connected to the gate electrode of the transistor,wherein at least a part of the storage capacitor is disposed between the substrate and the light-emitting element,wherein all of the substrate, the first electrode, the second electrode, and the third electrode are formed from a material transmitting a visible light emitted by the light-emitting element,wherein viewing from a normal direction of a surface of the substrate, a light-emitting region of the light-emitting element is provided within a charge accumulating region of the storage capacitor, andwherein the light emitting region is a region where the third electrode and the fourth electrode directly face each other.
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Abstract
An active matrix display apparatus includes a transistor, a storage capacitor, and a light-emitting element formed on a substrate. The transistor includes a source electrode, a drain electrode, and a gate electrode. The storage capacitor has a multilayered structure of a first electrode, a dielectric layer, and a second electrode stacked in this order on the substrate, and the light-emitting element has a multilayered structure of a third electrode, a light-emitting layer, and a fourth electrode stacked in this order on the substrate. The first electrode is electrically connected to the gate electrode of the transistor, and at least a part of the storage capacitor is disposed between the substrate and the light-emitting element. All of the substrate, the first electrode, the second electrode, and the third electrode are formed from a material transmitting a visible light emitted by the light-emitting element. Viewing from a top of the substrate, a region for storing charges in the storage capacitor includes or is equal to a light-emitting region of the light-emitting element.
39 Citations
16 Claims
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1. An active matrix display apparatus, comprising:
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a transistor, a storage capacitor, and a light-emitting element formed on a substrate, the transistor comprising a source electrode, a drain electrode, and a gate electrode, the storage capacitor having a multilayered structure of a first electrode, a dielectric layer, and a second electrode stacked in this order on the substrate, and the light-emitting element having a multilayered structure of a third electrode, a light-emitting layer, and a fourth electrode stacked in this order on the substrate, wherein the first electrode is electrically connected to the gate electrode of the transistor, wherein at least a part of the storage capacitor is disposed between the substrate and the light-emitting element, wherein all of the substrate, the first electrode, the second electrode, and the third electrode are formed from a material transmitting a visible light emitted by the light-emitting element, wherein viewing from a normal direction of a surface of the substrate, a light-emitting region of the light-emitting element is provided within a charge accumulating region of the storage capacitor, and wherein the light emitting region is a region where the third electrode and the fourth electrode directly face each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An active matrix display apparatus, comprising:
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a transistor, a storage capacitor, and a light-emitting element formed on a substrate, the transistor comprising a source electrode, a drain electrode, and a gate electrode, the storage capacitor having a multilayered structure of a first electrode, a dielectric layer, and a second electrode stacked in this order on the substrate, and the light-emitting element having a multilayered structure of a third electrode, a light-emitting layer, and a fourth electrode stacked in this order on the substrate, wherein the first electrode is electrically connected to the gate electrode of the transistor, wherein at least a part of the storage capacitor is disposed between the substrate and the light-emitting element, wherein all of the substrate, the first electrode, the second electrode, and the third electrode are formed from a material transmitting a visible light emitted by the light-emitting element, wherein viewing from a normal direction of a surface of the substrate, a light-emitting region of the light-emitting element is provided within a charge accumulating region of the storage capacitor, and wherein the light emitting region is a region where the third electrode and the fourth electrode overlap each other in the normal direction. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification
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Current AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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Original AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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InventorsOfuji, Masato, Abe, Katsumi, Sano, Masafumi, Kumomi, Hideya, Hayashi, Ryo
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Primary Examiner(s)Lee, Eugene
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Assistant Examiner(s)ULLAH, ELIAS
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Application NumberUS12/520,944Publication NumberTime in Patent Office2,035 DaysField of Search257/59, 257/72, 257/680, 257/696, 257/E23.141, 438/149, 438/29US Class Current257/59CPC Class CodesH10K 2102/3031 Two-side emission, e.g. tra...H10K 59/1201 Manufacture or treatmentH10K 59/1216 the pixel elements being ca...H10K 59/123 Connection of the pixel ele...
