Thin film transistor substrate, LCD device including the same, and method for manufacturing thin film transistor substrate
First Claim
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1. A thin film transistor substrate, comprising:
- a base substrate; and
a thin film transistor having a gate electrode provided on the base substrate, a gate insulating film provided so as to cover the gate electrode, a semiconductor layer comprised of an oxide semiconductor and provided on the gate insulating film so as to overlap the gate electrode, and a source electrode and a drain electrode which are provided on the gate insulating film so as to face each other on the semiconductor layer and so that a part of the source electrode and a part of the drain electrode are connected to the semiconductor layer, whereinthe source electrode and the drain electrode have a stack of a first conductive layer, a second conductive layer, and a third conductive layer,the third conductive layer is comprised of a low resistance metal that causes a redox reaction with the oxide semiconductor,the first conductive layer directly contacts the semiconductor layer, is formed by dry etching, and is comprised of a refractory metal including a Group 4 metal element that is less likely to cause the redox reaction with the oxide semiconductor than the third conductive layer does, an alloy primarily containing the Group 4 metal element, or a nitride or oxide thereof,the second conductive layer is comprised of a refractory metal including a Group 5 or Group 6 metal element into which metal particles of the third conductive layer are less likely to diffuse than into the first conductive layer, an alloy primarily containing the Group 5 or Group 6 metal element, or a nitride or oxide thereof, andthe semiconductor layer is formed by performing annealing in an oxygen-containing atmosphere after formation of the source electrode and the drain electrode.
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Abstract
A source electrode and a drain electrode are formed by a stack of a titanium layer, a molybdenum nitride layer, an aluminum layer, and a molybdenum nitride layer, the titanium layer is formed by dry etching, and an oxide semiconductor layer is formed by performing annealing in an oxygen-containing atmosphere after formation of the source electrode and the drain electrode.
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Citations
12 Claims
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1. A thin film transistor substrate, comprising:
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a base substrate; and a thin film transistor having a gate electrode provided on the base substrate, a gate insulating film provided so as to cover the gate electrode, a semiconductor layer comprised of an oxide semiconductor and provided on the gate insulating film so as to overlap the gate electrode, and a source electrode and a drain electrode which are provided on the gate insulating film so as to face each other on the semiconductor layer and so that a part of the source electrode and a part of the drain electrode are connected to the semiconductor layer, wherein the source electrode and the drain electrode have a stack of a first conductive layer, a second conductive layer, and a third conductive layer, the third conductive layer is comprised of a low resistance metal that causes a redox reaction with the oxide semiconductor, the first conductive layer directly contacts the semiconductor layer, is formed by dry etching, and is comprised of a refractory metal including a Group 4 metal element that is less likely to cause the redox reaction with the oxide semiconductor than the third conductive layer does, an alloy primarily containing the Group 4 metal element, or a nitride or oxide thereof, the second conductive layer is comprised of a refractory metal including a Group 5 or Group 6 metal element into which metal particles of the third conductive layer are less likely to diffuse than into the first conductive layer, an alloy primarily containing the Group 5 or Group 6 metal element, or a nitride or oxide thereof, and the semiconductor layer is formed by performing annealing in an oxygen-containing atmosphere after formation of the source electrode and the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification