Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming
First Claim
1. A light emitting diode, comprising:
- a plurality of semiconductor layers at least one of which has a light emitting surface;
at least a portion of said light emitting surface having a high aspect ratio submicron roughness to enhance light extraction, such that the submicron roughness comprises structures with submicron height and width.
3 Assignments
0 Petitions
Accused Products
Abstract
The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.
-
Citations
15 Claims
-
1. A light emitting diode, comprising:
-
a plurality of semiconductor layers at least one of which has a light emitting surface; at least a portion of said light emitting surface having a high aspect ratio submicron roughness to enhance light extraction, such that the submicron roughness comprises structures with submicron height and width. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A semiconductor device, comprising:
-
a plurality of semiconductor layers at least one of which has an exposed surface; at least a portion of said exposed surface having a high aspect ratio submicron roughness, such that the submicron roughness comprises structures with submicron height and width.
-
Specification