Optoelectronic device and method for manufacturing the same

• US 8,507,925 B2
• Filed: 12/02/2011
• Issued: 08/13/2013
• Est. Priority Date: 12/02/2010
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Kuo, De-Shan, Ko, Tsun-Kai
• Primary Examiner(s): YUSHIN, NIKOLAY K
• Application Number:
  US13/310,339
• Publication Number:
  US 20120138980A1
• Time in Patent Office: 620 Days
• Field of Search: 257/79, 257/94, 257/100, 257/E33.027, 438/22, 438/26, 438/47, 977/932, 977/834, 977/949
• US Class Current: 257/79
• CPC Class Codes: H01L 31/035227 the quantum structure being quantum wires, or nanorods carbon nanotubes H10K85/211
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01S 2304/12 Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
• CPC Class Codes: H10K 50/858 comprising refractive means, e.g. lenses
• CPC Class Codes: H10K 59/879 comprising refractive means, e.g. lenses

Abstract

An optoelectronic device, comprising: a substrate; a plurality of the first semiconductor rods formed on the substrate, contacted with the substrate, and exposed partial of the first surface of the substrate; a first protection layer formed on the sidewall of the plurality of the first semiconductor rods and the exposed partial of the first surface of the substrate; a first buffer layer formed on the plurality of the first semiconductor rods wherein the first buffer layer having a first surface and a second surface opposite to the first surface, and the plurality of the first semiconductor rods directly contacted with the first surface; and at least one first hollow component formed among the first semiconductor rods, the first surface of the substrate, and the first surface of the first buffer layer and the ratio of the height and the width of the first hollow component is 1/5-3.

Claims

1. An optoelectronic device, comprising:

a substrate having a first surface and a normal direction perpendicular to the first surface;

a plurality of the first semiconductor rods formed on the first surface of the substrate, contacted with the substrate, and exposed partial of the first surface of the substrate;

a first protection layer formed on the sidewall of the plurality of the first semiconductor rods and the exposed partial of the first surface of the substrate;

a first buffer layer formed on the plurality of the first semiconductor rods wherein the first buffer layer having a first surface and a second surface opposite to the first surface, and the plurality of the first semiconductor rods directly contacted with the first surface; and

at least one first hollow component formed among the first semiconductor rods, the first surface of the substrate, and the first surface of the first buffer layer, wherein the width of the first hollow component is further defined as the largest size of the first hollow component perpendicular to the normal direction of the substrate and the height of the first hollow component is further defined as the largest size of the first hollow component parallel with the normal direction of the substrate and the ratio of the height and the width of the first hollow component is 1/5-3.

2. The optoelectronic device of claim 1, wherein the width of the first hollow component is 0.5 μ

m-2 μ

m, and/or the height of the first hollow component is 50 nm-600 nm.

3. The optoelectronic device of claim 1, further comprising a plurality of the first hollow components formed among the first semiconductor rods, the first surface of the substrate, and the first surface of the first buffer layer, and at least two first hollow components can link into a mesh or porous structure;

or the plurality of the first hollow components can be formed as a regular array and the average distance of the first hollow components can be 10 nm-1.5 μ

m and the porosity of the first hollow components can be 5-90%.

4. The optoelectronic device of claim 1, further comprising a second semiconductor layer, an active layer, and a third semiconductor layer formed on the second surface of the first buffer layer wherein the material of the second semiconductor layer, the active layer, or the third semiconductor layer contains at least one element selected from the group consisting of Al, Ga, In, As, P, and N.

5. The optoelectronic device of claim 1, further comprising a plurality of the second semiconductor rods formed on the second surface of the first buffer layer and exposed partial of the second surface of the first buffer layer;

a second protection layer formed on the sidewall of the plurality of the second semiconductor rods and the exposed partial of the second surface of the first buffer layer;

a second buffer layer formed on the plurality of the second semiconductor rods wherein the second buffer layer having a first surface and a second surface opposite to the first surface, and the plurality of the second semiconductor rods directly contacted with the first surface; and

at least one second hollow component formed among the second semiconductor rods, the second surface of the first buffer layer, and the first surface of the second buffer layer, wherein the width of the second hollow component is further defined as the largest size of the second hollow component perpendicular to the normal direction of the substrate and the height of the second hollow component is further defined as the largest size of the second hollow component parallel with the normal direction of the substrate and the ratio of the height and the width of the second hollow component is 1/5-3.

6. The optoelectronic device of claim 5, wherein the width of the second hollow component is 0.5 μ

m-2 μ

m, and/or the height of the second hollow component is 50 nm-600 nm.

7. The optoelectronic device of claim 5, wherein a plurality of the second hollow components is formed among the second semiconductor rods, the second surface of the first buffer layer, and the first surface of the second buffer layer, and at least two second hollow components can link into a mesh or porous structure;

or the plurality of the second hollow components can be formed as a regular array and the average distance of the second hollow components can be 10 nm-1.5 μ

m and the porosity of the second hollow components can be 5-90%.

8. The optoelectronic device of claim 5, wherein the first buffer layer or the second buffer layer can be an unintentional doped layer, an undoped layer, or an n-type doped layer.

9. The optoelectronic device of claim 5, wherein the material of the first protection layer, or the second protection layer can be SiO₂, HSQ (Hydrogen silesquioxane), MSQ (Methylsequioxane), and Polymer of silsequioxane.

10. A method of fabricating an optoelectronic device, comprising:

providing a substrate having a first surface and a normal direction perpendicular to the first surface;

forming a first semiconductor layer on the first surface of the substrate;

patterning the first semiconductor layer to form a plurality of the first semiconductor rods and exposing partial of the first surface of the substrate;

providing a first protection layer to cover on the sidewall of the plurality of the first semiconductor rods and the exposed partial of the first surface of the substrate;

forming a first buffer layer on the plurality of the first semiconductor rods wherein the first buffer layer having a first surface and a second surface opposite to the first surface, and the plurality of the first semiconductor rods directly contacted with the first surface; and

forming at least one first hollow component among the first semiconductor rods, the first surface of the substrate, and the first surface of the first buffer layer, wherein the width of the first hollow component is further defined as the largest size of the first hollow component perpendicular to the normal direction of the substrate and the height of the first hollow component is further defined as the largest size of the first hollow component parallel with the normal direction of the substrate and the ratio of the height and the width of the first hollow component is 1/5-3.

11. The method of fabricating an optoelectronic device of claim 10, wherein the width of the first hollow component is 0.5 μ

m-2 μ

m, and/or the height of the first hollow component is 50 nm-600 nm.

12. The method of fabricating an optoelectronic device of claim 10, wherein the method to pattern the first semiconductor layer comprising:

forming an anti-etching layer on the first semiconductor layer;

forming a thin-film metal layer on the anti-etching layer;

treating thin-film metal layer into a plurality of nanoscale metal particles by thermal treatment;

using the plurality of nanoscale metal particles as a mask to pattern the anti-etching layer by anisotropic etching method;

removing the plurality of nanoscale metal particles; and

using the patterned anti-etching layer as mask to anisotropically etch the first semiconductor layer.

13. The method of fabricating an optoelectronic device of claim 10, further comprising forming a plurality of the first hollow components among the first semiconductor rods, the first surface of the substrate, and the first surface of the first buffer layer, and at least two first hollow components can link into a mesh or porous structure;

or the plurality of the first hollow components can be formed as a regular array and the average distance of the first hollow components can be 10 nm-1.5 μ

m and the porosity of the first hollow components can be 5-90%.

14. The method of fabricating an optoelectronic device of claim 10, further comprising a second semiconductor layer, an active layer, and a third semiconductor layer formed on the second surface of the first buffer layer wherein the material of the second semiconductor layer, the active layer, or the third semiconductor layer contains at least one element selected from the group consisting of Al, Ga, In, As, P, and N.

15. The method of fabricating an optoelectronic device of claim 10, further comprising forming a plurality of the second semiconductor rods on the second surface of the first buffer layer, and exposed partial of the second surface of the first buffer layer;

forming a second protection layer on the sidewall of the plurality of the second semiconductor rods and the exposing partial of the second surface of the first buffer layer;

forming a second buffer layer on the plurality of the second semiconductor rods wherein the second buffer layer having a first surface and a second surface opposite to the first surface, and the plurality of the second semiconductor rods directly contacted with the first surface; and

forming at least one second hollow component among the second semiconductor rods, the second surface of the first buffer layer, and the first surface of the second buffer layer, wherein the width of the second hollow component is further defined as the largest size of the second hollow component perpendicular to the normal direction of the substrate and the height of the second hollow component is further defined as the largest size of the second hollow component parallel with the normal direction of the substrate and the ratio of the height and the width of the second hollow component is 1/5-3.

16. The method of fabricating an optoelectronic device of claim 15, wherein the width of the second hollow component is 0.5 μ

m-2 μ

m, and/or the height of the second hollow component is 50 nm-600 nm.

17. The method of fabricating an optoelectronic device of claim 15, wherein a plurality of the second hollow components is formed among the second semiconductor rods, the second surface of the first buffer layer, and the first surface of the second buffer layer, and at least two second hollow components can link into a mesh or porous structure;

or the plurality of the second hollow components can be formed as a regular array and the average distance of the second hollow components can be 10 nm-1.5 μ

m and the porosity of the second hollow components can be 5-90%.

18. The method of fabricating an optoelectronic device of claim 15, wherein the first buffer layer or the second buffer layer can be an unintentional doped layer, an undoped layer, or an n-type doped layer.

19. The method of fabricating an optoelectronic device of claim 15, wherein the first protection layer or the second protection layer is formed by the method of spin on glass coating.