Wafer scale chip scale packaging of vertically integrated MEMS sensors with electronics

• US 8,508,039 B1
• Filed: 05/08/2008
• Issued: 08/13/2013
• Est. Priority Date: 05/08/2008
• Status: Active Grant

• Current Assignee: Invensense Incorporated (TDK Corporation)
• Original Assignee: Invensense Incorporated (TDK Corporation)
• Inventors: Nasiri, Steven S., Yaralioglu, Goksen G.
• Primary Examiner(s): Lee, Eugene
• Assistant Examiner(s): Jiang, Fang-Xing
• Application Number:
  US12/117,264
• Time in Patent Office: 1,923 Days
• Field of Search: 257/678, 257/783, 257/704, 257/E21.499, 735/142.9, 438/66, 438/125
• US Class Current: 257/704
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 2203/0792 Forming interconnections between the electronic processing unit and the micromechanical structure
• CPC Class Codes: H01L 2224/11 Manufacturing methods

Abstract

In a method and system in accordance with the present invention, solder balls are added on top of vertically integrated MEMS with CMOS by using wafer scale fabrication compatible with existing chip scale packaging capabilities. In the present invention, both the MEMS and the CMOS dies are fabricated in equal dimensions. On the MEMS level, silicon islands are defined by DRIE etching to be bonded on top of CMOS pads. These conducting silicon islands later provide electrical connections between the CMOS pads and the conducting traces that lead to solder balls on top.

Claims

1. A MEMS package comprising:

a MEMS die containing;

a first substrate comprising a substrate with a CMOS device, wherein the CMOS device includes a plurality of CMOS pads;

a second substrate comprising a MEMS subassembly, bonded to the first substrate;

a third substrate comprising a cover and bonded to the MEMS subassembly;

the MEMS subassembly having generally a planar surface and an edge surfaces;

a fourth substrate adhesively attached on top of a planar surface of the third substrate; and

wherein the MEMS subassembly is highly doped silicon and electrically insulated from the third substrate;

wherein there are silicon islands formed out of the second substrate, wherein the silicon islands are electrically isolated from the rest of the second substrate, wherein silicon islands are attached to the third substrate;

wherein the silicon islands have stand offs with conducting layers;

wherein the stand offs with conductive layers can form an electrical connection to the plurality of CMOS pads on the CMOS device of the first substrate;

wherein solder balls are formed on a top side of the fourth substrate and are electrically connected to the plurality of CMOS pads, a layer of insulation between the third and fourth substrates;

wherein a metallization attached on the edge surface of the fourth substrates and on top of the layer of insulation covering the edge of the third substrate, wherein the metallization is attached on the edge surface of the second substrate to the plurality of silicon islands, wherein the plurality of silicon islands are without insulation and one of the silicon islands makes an ohmic electrical connections to the metallization, wherein the plurality of silicon islands provide the final connection to the plurality of CMOS pads on the CMOS device.

2. The MEMS package of claim 1, wherein the third substrate is silicon, glass or quartz.

3. The MEMS package of claim 1, wherein the bond between the second substrate and the CMOS substrate is a eutectic Al/Ge bond between Ge on the stand offs and Al on the CMOS.

4. The MEMS package of claim 1, wherein the bond between the second substrate and the CMOS substrate is a soldering of Au/Sn between the second substrate stand offs and the plurality of CMOS pads, where the CMOS pads are coated Cu, Ti/Cu, Au, TI/Au, Cr/Au, Ni, or Cr/Ni.

5. The MEMS package of claim 1 wherein the third substrate having an Aluminum layer on top and on side edges to prevent EMI coupling and to reduce parasitic coupling.

6. The MEMS package of claim 1 wherein the third substrate having an Aluminum layer only on top to prevent EMI coupling and to reduce parasitics.

7. The MEMS package of claim 1, which includes an solder mask under the solder balls and an Aluminum layer;

wherein the aluminum layer is under the solder mask, on top of the fourth substrate and on the edge surfaces to prevent EMI coupling.

8. The MEMS package of claim 1 wherein there is at least one silicon island connected to ground potential between the plurality of silicon islands.

9. The MEMS package of claim 1 wherein edge surfaces are designed in an angle to facilitate easy fabrication and deposition of the interconnects and lithography.

10. The MEMS package of claim 1 including aluminum, copper, doped poly silicon, or any other conducting material.

11. The MEMS package of claim 1 including an isolation layer between the fourth substrate and the third substrate, the isolation layer being made of epoxy, BCB, polyimide, or solder mask.

12. The MEMS package of claim 1 including an isolation layer between the fourth substrate and the metallization, the isolation layer being made of epoxy, BCB, polyimide, or solder mask.

13. The MEMS package of claim 1 being compatible with creating a hermetic seal for the MEMS.

14. The MEMS package of claim 1 being compatible with wafer scale packaging.

15. The MEMS package of claim 1 wherein the third substrate of claim 1 being thinned down to 150 micro-meters.

16. The MEMS package of claim 1 wherein the fourth substrate being nominally 100 micro-meters.

17. The MEMS package of claim 1 having the cover thinned down to 150 micrometers.

18. The MEMS package of claim 1 wherein the first substrate is thinned down to 250 micro-meters.

19. A MEMS package comprising:

a first substrate comprising a substrate with a CMOS device, wherein the CMOS device includes a plurality of CMOS pads;

a second substrate comprising a MEMS subassembly, bonded to the first substrate;

a third substrate comprising a cap bonded to the MEMS subassembly;

the MEMS subassembly having generally a planar surface and an edge surfaces; and

a fourth substrate, adhesively attached on top of the third substrate on the planar surface;

wherein the MEMS subassembly is highly doped silicon and electrically insulated from the third substrate;

wherein there are silicon islands formed out of the second substrate wherein the silicon islands are electrically isolated from the rest of the second substrate, wherein the silicon islands have stand offs with conducting layers.

20. The MEMS device of claim 19, wherein the stand offs with conductive layers can form an electrical interconnection to the pads of the first substrate, on the CMOS device.

21. The MEMS device of claim 19, wherein solder balls are formed on a top side of the fourth substrate and are electrically connected to the plurality of CMOS pads, wherein a metallization attached on the edge surface of the fourth and the third substrates and on top of a layer of insulation, wherein the layer of insulation covers the edge surface along the third substrate, wherein the metallization is attached on the edge surface of the second substrate to the plurality of silicon islands, wherein the plurality of silicon islands are not covered by the insulation layer and one of the silicon islands makes an ohmic electrical connections to the metallization, wherein the plurality of silicon islands provide the final connection to the plurality of CMOS pads on the CMOS device.