Bonding method for three-dimensional integrated circuit and three-dimensional integrated circuit thereof
First Claim
1. A three-dimensional integrated circuit, comprising:
- a first integrated circuit, comprising;
a first substrate;
a first film layer, formed on the first substrate, having a first pattern structure formed thereon; and
a first metal co-deposition layer disposed on the first film layer, having a first metal and a second metal deposited therewithin; and
a second integrated circuit, comprising;
a second substrate;
a second film layer, formed on the second substrate, having a second pattern structure formed thereon; and
a second metal co-deposition layer disposed on the second film layer, having the first metal and the second metal deposited therewithin;
wherein the second integrated circuit is superimposed onto the first integrated circuit at a predetermined temperature, such that the first metal co-deposition layer and the second metal co-deposition layer are bonded with each other, and at least a portion of atoms of the first metal diffuse toward a bonding interface between the first metal co-deposition layer and the second metal co-deposition layer, and at least a portion of atoms of the second metal diffuse toward the respective film layers of each of the integrated circuits to form adhesion and barrier layers for the first metal.
3 Assignments
0 Petitions
Accused Products
Abstract
The present invention discloses a bonding method for a three-dimensional integrated circuit and the three-dimensional integrated circuit thereof. The bonding method comprises the steps of: providing a substrate; depositing a film layer on the substrate; providing a light source to light onto the film layer to form a graphic structure; forming a metal co-deposition layer by a first metal and a second metal that are co-deposited on the film layer; providing a first integrated circuit having the substrate, the film layer and the metal co-deposition layer sequentially; providing a second integrated circuit that having the metal co-deposition layer, the film layer and the substrate sequentially; and the first integrated circuit is bonded with the second integrated circuit at a predetermined temperature to form a three-dimensional integrated circuit.
6 Citations
9 Claims
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1. A three-dimensional integrated circuit, comprising:
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a first integrated circuit, comprising; a first substrate; a first film layer, formed on the first substrate, having a first pattern structure formed thereon; and a first metal co-deposition layer disposed on the first film layer, having a first metal and a second metal deposited therewithin; and a second integrated circuit, comprising; a second substrate; a second film layer, formed on the second substrate, having a second pattern structure formed thereon; and a second metal co-deposition layer disposed on the second film layer, having the first metal and the second metal deposited therewithin; wherein the second integrated circuit is superimposed onto the first integrated circuit at a predetermined temperature, such that the first metal co-deposition layer and the second metal co-deposition layer are bonded with each other, and at least a portion of atoms of the first metal diffuse toward a bonding interface between the first metal co-deposition layer and the second metal co-deposition layer, and at least a portion of atoms of the second metal diffuse toward the respective film layers of each of the integrated circuits to form adhesion and barrier layers for the first metal. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A three-dimensional integrated circuit, comprising:
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a first integrated circuit, having a first substrate, a first film layer and a first metal co-deposition layer sequentially; and a second integrated circuit, having a second metal co-deposition layer, a second film layer and a second substrate sequentially; wherein, the first metal co-deposition layer and the second metal co-deposition layer are bonded with each other at a predetermined temperature, and an adhesion and barrier layer is formed near the first film layer or the second film layer, and a boundary protection layer is formed near a surface of the first metal co-deposition layer or the second metal co-deposition layer. - View Dependent Claims (8, 9)
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Specification