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Structure and method to improve threshold voltage of MOSFETs including a high k dielectric

  • US 8,513,085 B2
  • Filed: 03/01/2012
  • Issued: 08/20/2013
  • Est. Priority Date: 08/04/2009
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • at least one patterned gate stack in at least one device region of a semiconductor substrate, said at least one patterned gate stack including from bottom to top, a patterned gate dielectric material having a dielectric constant of greater than silicon oxide, a patterned threshold voltage adjusting layer and a patterned gate conductor, wherein said patterned threshold voltage adjusting layer is an nFET threshold voltage adjusting material, said nFET threshold adjusting material includes a rare earth metal-containing material or an alkaline earth metal-containing material; and

    a conformal nitride-containing liner located on at least exposed sidewalls of the patterned gate dielectric material, said conformal nitride-containing liner having a thickness of from 0.5 nm to 50 nm.

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