Crosslinkable graft polymer non preferentially wetted by polystyrene and polyethylene oxide

• US 8,513,359 B2
• Filed: 09/13/2012
• Issued: 08/20/2013
• Est. Priority Date: 06/19/2007
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Millward, Dan B.
• Primary Examiner(s): JONES JR., ROBERT STOCKTON
• Application Number:
  US13/615,203
• Publication Number:
  US 20130004707A1
• Time in Patent Office: 341 Days
• Field of Search: 525/404, 525/108, 525/187, 528/393, 528/421
• US Class Current: 525/187
• CPC Class Codes: B32B 3/10 characterised by a discontinuous layer, i.e. formed of separate pieces of material
• CPC Class Codes: B81C 1/00031 Regular or irregular arrays of nanoscale structures, e.g. etch mask layer photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002
• CPC Class Codes: B81C 2201/0149 Forming nanoscale microstructures using auto-arranging or self-assembling material
• CPC Class Codes: B81C 2201/0198 for making a masking layer
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C08G 81/02 at least one of the polymers being obtained by reactions involving only carbon-to-carbon unsaturated bonds
• CPC Class Codes: G03F 7/12 Production of screen printing forms or similar printing forms, e.g. stencils
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: Y10T 428/24174 including sheet or component perpendicular to plane of web or sheet
• CPC Class Codes: Y10T 428/24182 Inward from edge of web or sheet
• CPC Class Codes: Y10T 428/24521 with component conforming to contour of nonplanar surface
• CPC Class Codes: Y10T 428/24612 Composite web or sheet

Abstract

Methods for fabricating a random graft PS-r-PEO copolymer and its use as a neutral wetting layer in the fabrication of sublithographic, nanoscale arrays of elements including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Claims

1. A method for fabricating a film comprising nanoscale microstructures, comprising:

forming a solution comprising an azido-functionalized random graft copolymer by;

reacting a reaction mixture comprising p-chloromethylstyrene monomers to form a p-chloromethylstyrene homopolymer comprising chloromethyl moieties and repeating units derived from p-chloromethylstyrene;

reacting the p-chloromethylstyrene homopolymer with one or more oligomers or polymers of poly(ethylene oxide) to form a graft copolymer comprising chloromethyl moieties, wherein the poly(ethylene oxide) has only one nucleophilic end; and

reacting the graft copolymer with an azide compound to displace chlorine atoms of the chloromethyl moieties to form azidomethyl moieties on the graft copolymer, wherein the azide compound is selected from the group consisting of sodium azide and R(N₃)_X, where R is a metal atom other than sodium, a hydrogen atom or an ammonium radical, and x is greater than zero;

applying the solution comprising the azido-functionalized random graft copolymer to a floor of at least one trench in a substrate to form a random graft copolymer material;

crosslinking at least a portion of the random graft copolymer material;

forming a self-assembling block copolymer on the random graft copolymer material; and

annealing the self-assembling block copolymer to form a material comprising self-assembled polymer domains.

2. The method of claim 1, wherein the at least one trench in the substrate comprises sidewalls that are preferentially wetting to one block of the self-assembling block copolymer.

3. The method of claim 1, wherein the self-assembled polymer domains are oriented perpendicular to the floor of the at least one trench.

4. The method of claim 1, wherein the self-assembling block copolymer is a lamellar-phase block copolymer.

5. The method of claim 1, wherein the self-assembling block copolymer is a cylindrical-phase block copolymer.

6. The method of claim 1, wherein the random graft copolymer material is neutral wetting to both blocks of the self-assembling block copolymer.

7. The method of claim 1, wherein the self-assembling block copolymer has a thickness of about an L_o value of the self-assembling block copolymer.

8. The method of claim 1, wherein crosslinking at least a portion of the random graft copolymer material comprises:

masking one or more portions of the random graft copolymer material;

crosslinking the unmasked portions of the random graft copolymer material; and

selectively removing non-crosslinked portions of the random graft copolymer material to expose portions of the substrate.

9. The method of claim 8, wherein the self-assembling block copolymer is a cylindrical-phase block copolymer, and the self-assembled polymer domains comprise perpendicular-oriented cylindrical polymer domains on the portions of the crosslinked random graft copolymer material and parallel-oriented half-cylindrical domains on the exposed portions of the substrate.

10. The method of claim 1, wherein crosslinking at least a portion of the random graft copolymer material comprises:

crosslinking the random graft copolymer material;

masking one or more portions of the crosslinked random graft copolymer material; and

removing unmasked portions of the crosslinked random graft copolymer material to expose the substrate on the floor of the at least one trench.

11. A method for fabricating a film comprising nanoscale microstructures, the method comprising:

forming a solution comprising an azido-functionalized random polystyrene-r-ethylene oxide) graft copolymer by;

reacting a reaction mixture comprising p-chloromethylstyrene and styrene to form polymer chains comprising chloromethyl moieties and repeating units derived from p-chloromethylstyrene and styrene, wherein the reaction mixture comprises p-chloromethylstyrene in a molecular amount greater than a molecular amount of styrene;

reacting the polymer chains with one or more oligomers or polymers of poly(ethylene oxide) to form a graft copolymer comprising chloromethyl moieties, wherein the poly(ethylene oxide) has only one nucleophilic end; and

reacting the graft copolymer comprising chloromethyl moieties with an azide compound to displace chlorine atoms of the chloromethyl moieties to form azidomethyl moieties on the graft copolymer;

applying the solution comprising an azido-functionalized random poly(styrene-r-ethylene oxide) graft copolymer to a floor of at least one trench in a substrate to form a random graft copolymer material;

crosslinking at least a portion of the random graft copolymer material;

forming a self-assembling block copolymer on the random graft copolymer material; and

annealing the self-assembling block copolymer to form a material comprising self-assembled polymer domains.

12. The method of claim 11, wherein the self-assembling block copolymer comprises poly(styrene-b-ethylene oxide) block copolymer.

13. The method of claim 11, further comprising selectively removing non-crosslinked portions of the random graft copolymer material to expose portions of the substrate, prior to forming the self-assembling block copolymer on the random graft copolymer material.

14. The method of claim 11, further comprising selectively removing at least a portion of the crosslinked random graft copolymer material to expose the substrate on the floor of the at least one trench, prior to forming the self-assembling block copolymer on the random graft copolymer material.