Semiconductor light-emitting device and method for fabricating the same
First Claim
Patent Images
1. A semiconductor light-emitting device, comprising:
- a conductive support member;
a reflective layer disposed above the conductive support member;
an adhesion layer between the reflective layer and the conductive support member;
a light-emitting structure disposed above the reflective layer, the light-emitting structure comprising a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer;
an electrode disposed on the light emitting structure;
a channel layer disposed along a bottom edge of the light emitting structure; and
a current blocking layer that corresponds to the electrode, wherein the adhesion layer has a top surface including a plurality of first protrusion portions and a plurality of first recess portions, wherein the reflective layer has a bottom surface including a plurality of second protrusion portions and a plurality of second recess portions, wherein one of the plurality of second protrusions of the reflective layer under the current blocking layer is disposed on at least one of the plurality of first recess portions or the plurality of first protrusion portions of the adhesion layer, and wherein the top surface of the adhesion layer contacts the bottom surface of the channel layer.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, a reflective layer, a conductive support member, and a channel layer. The light-emitting structure may include a plurality of compound semiconductor layers. The electrode may be disposed on the compound semiconductor layer. The reflective layer may be disposed under the compound semiconductor layer. The conductive support member may be disposed under the reflective layer. The channel layer may be disposed along a bottom edge of the compound semiconductor layer.
-
Citations
18 Claims
-
1. A semiconductor light-emitting device, comprising:
-
a conductive support member; a reflective layer disposed above the conductive support member; an adhesion layer between the reflective layer and the conductive support member; a light-emitting structure disposed above the reflective layer, the light-emitting structure comprising a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, and a second conductive type semiconductor layer disposed on the active layer; an electrode disposed on the light emitting structure; a channel layer disposed along a bottom edge of the light emitting structure; and a current blocking layer that corresponds to the electrode, wherein the adhesion layer has a top surface including a plurality of first protrusion portions and a plurality of first recess portions, wherein the reflective layer has a bottom surface including a plurality of second protrusion portions and a plurality of second recess portions, wherein one of the plurality of second protrusions of the reflective layer under the current blocking layer is disposed on at least one of the plurality of first recess portions or the plurality of first protrusion portions of the adhesion layer, and wherein the top surface of the adhesion layer contacts the bottom surface of the channel layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSuzhou Lekin Semiconductor Company Limited
-
Original AssigneeLG Innotek Company Limited (LG Corporation)
-
InventorsJeong, Hwan Hee, Lee, Sang Youl, Song, June O, Moon, Ji Hyung, Choi, Kwang Ki
-
Primary Examiner(s)YEUNG LOPEZ, FEIFEI
-
Application NumberUS12/797,927Publication NumberTime in Patent Office1,167 DaysField of SearchNoneUS Class Current257/79CPC Class CodesH01L 2224/48091 ArchedH01L 2224/48247 connecting the wire to a bo...H01L 2924/00014 the subject-matter covered ...H01L 2933/0091 Scattering means in or on t...H01L 33/0093 Wafer bonding; Removal of t...H01L 33/22 Roughened surfaces, e.g. at...H01L 33/405 Reflective materialsH01L 33/44 characterised by the coatin...
