Light emitting device, light emitting device package and lighting system including the same

• US 8,513,681 B2
• Filed: 06/18/2012
• Issued: 08/20/2013
• Est. Priority Date: 05/04/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Hwang, Sung Min, Song, Hyun Don, Cho, Hyun Kyong
• Primary Examiner(s): Diaz, Jose R
• Application Number:
  US13/526,411
• Publication Number:
  US 20120256226A1
• Time in Patent Office: 428 Days
• Field of Search: 257/79, 257/94, 257/99, 257/103, 257/E33.072
• US Class Current: 257/79
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0033 having Schottky barriers
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/48 characterised by the semiconductor body packages
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting device including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Claims

1. A light emitting device, comprising:

a light emitting structure;

a first electrode on an upper portion of the light emitting structure;

a second electrode on a bottom portion of the light emitting structure;

a schottky contact layer between at least one area of the second electrode and the bottom portion of the light emitting structure,

wherein the second electrode comprises a reflective layer, and

wherein a material of the schottky contact layer is different from a material of the reflective layer.

2. The light emitting device of claim 1, wherein the schottky contact layer vertically overlaps with at least one portion of the first electrode.

3. The light emitting device of claim 1, wherein the schottky contact layer is directly disposed on the bottom portion of the light emitting structure.

4. The light emitting device of claim 1, wherein a lateral width of the schottky contact layer is smaller than a lateral width of the reflective layer.

5. The light emitting device of claim 1, wherein the reflective layer is disposed at both side surfaces of the schottky contact layer.

6. The light emitting device of claim 1, wherein a top surface of the schottky contact layer is substantially flush with a top surface of the second electrode.

7. The light emitting device of claim 1, wherein the schottky contact layer comprises a metal which makes a Schottky contact with the light emitting structure.

8. The light emitting device of claim 7, wherein the schottky contact layer comprises at least one selected from the group consisting of titanium (Ti), zirconium (Zr), chrome (Cr), gold (Au), tungsten (W), and an alloy including at least one of titanium (Ti), zirconium (Zr), chrome (Cr), gold (Au), and tungsten (W).

9. The light emitting device of claim 1, wherein the schottky contact layer comprises a schottky barrier in a contact portion with the light emitting structure.

10. The light emitting device of claim 1, further comprising an adhesive layer under both the schottky contact layer and the reflective layer.

11. A light emitting device, comprising:

a light emitting structure;

a first electrode on an upper portion of the light emitting structure;

a second electrode on a bottom portion of the light emitting structure;

a current blocking layer including a metal between at least one area of the second electrode and the bottom portion of the light emitting structure,

wherein the second electrode comprises a reflective layer, and an adhesive layer,

wherein the adhesive layer is disposed under both the current blocking layer and the reflective layer,

wherein the adhesive layer comprises an at least one protrusion portion protruding toward the current blocking layer, and

wherein the current blocking layer vertically overlaps with at least one portion of the first electrode.

12. The light emitting device of claim 11, wherein the current blocking layer is disposed between the light emitting structure and the at least one protrusion portion of the adhesive layer.

13. The light emitting device of claim 11, wherein a material of the current blocking layer is different from a material of the reflective layer.

14. The light emitting device of claim 11, wherein the current blocking layer is physically contacted with on the bottom portion of the light emitting structure.

15. The light emitting device of claim 11, wherein the current blocking layer comprises a metal which makes a Schottky contact with the light emitting structure.

16. The light emitting device of claim 11, wherein the reflective layer is disposed at both side surfaces of current blocking layer.

17. The light emitting device of claim 11, wherein a top surface of the current blocking layer is substantially flush with a top surface of the second electrode.

18. A light emitting device, comprising:

a second electrode;

a light emitting structure on the second electrode;

a first electrode on an upper portion of the light emitting structure;

a schottky contact layer between at least one area of the second electrode and a bottom portion of the light emitting structure,

wherein the second electrode comprises a reflective layer disposed at least both side surfaces of the schottky contact layer, and

wherein a material of the schottky contact layer is different from a material of the reflective layer.