High output small area group III nitride LEDs

• US 8,513,686 B2
• Filed: 01/18/2005
• Issued: 08/20/2013
• Est. Priority Date: 09/22/2004
• Status: Active Grant

• Current Assignee: CREE Led Incorporated (Smart Global Holdings Incorporated)
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Edmond, John Adam
• Primary Examiner(s): MATTHEWS, COLLEEN ANN
• Application Number:
  US11/037,965
• Publication Number:
  US 20060060879A1
• Time in Patent Office: 3,136 Days
• Field of Search: 257/79, 257/94, 257/103, 257/98, 257/E33.03, 257/E33.068
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A light emitting diode is disclosed with advantageous output on a per unit area basis. The diode includes an area of less than 100,000 square microns, operates at a forward voltage of less than 4.0 volts, produces a radiant flux of at least 24 milliwatts at 20 milliamps drive current, and emits at a dominant wavelength between about 395 and 540 nanometers.

Claims

1. A light emitting diode comprising:

a die with an area of 100,000 square microns or less;

an active structure formed from Group III nitride material;

a silver-based mirror layer providing electrical contact with the active structure; and

a barrier layer including a portion that surrounds the silver-based mirror layer and extends to the active structure to prevent reaction of silver with other parts of the light emitting diode,

wherein the light emitting diode is operable with a forward voltage of less than 4.0 volts and approximately 20 milliamps of drive current to produce a radiant flux of at least 24 milliwatts and a dominant wavelength between 395 and 540 nanometers.

2. A light emitting diode according to claim 1 having a dominant wavelength between about 450 and 480 nanometers.

3. A light emitting diode according to claim 1 having a dominant wavelength between about 455 and 465 nanometers.

4. A light emitting diode according to claim 1 having a radiant flux of at least 27 milliwatts at approximately 20 milliamps drive current.

5. A light emitting diode according to claim 1 comprising ohmic contacts on respective opposite vertical sides of said diode.

6. A light emitting diode according to claim 1 comprising at least one layer of conductive silicon carbide.

7. A light emitting diode according to claim 1 comprising at least one active layer formed of a Group III nitride.

8. A light emitting diode according to claim 7 wherein said active layer is selected from the group consisting of gallium nitride, indium gallium nitride, aluminum gallium nitride, and aluminum indium gallium nitride.

9. A light emitting diode according to claim 1 that operates at a forward voltage of less than 3.5 volts.

10. A pixel that includes the light emitting diode of claim 1.

11. A display that includes the pixel of claim 10.

12. A light emitting diode according to claim 1 comprising:

a substrate with oblique surfaces that increase light output by reducing internal reflection;

a wire bond pad on the substrate; and

a 5 mm package encapsulating said die;

wherein the light emitting diode is operable with an external quantum efficiency of greater than forty five percent (45%) at wavelengths of between about 420 and 465 nm.

13. A light emitting diode according to claim 12 wherein said package includes at least a die cup and wherein said active layer is adjacent said cup and said substrate faces away from said cup.

14. A light emitting diode according to claim 13 that operates at a forward voltage of less than 3.5 volts.

15. A light emitting diode according to claim 14 that has an external quantum efficiency greater than 50% at wavelength of between about 420 and 460 nm.

16. A light emitting diode according to claim 15 that has an external quantum efficiency greater than 40% at a wavelength of between about 400 and 480 nm.

17. A light emitting diode comprising:

an active structure formed from Group III nitride material;

a silver-based mirror layer providing electrical contact with the active structure; and

a barrier layer including a portion that surrounds the silver-based mirror layer and extends to the active structure to prevent reaction of silver with other parts of the light emitting diode;

wherein the light emitting diode is operable with a forward voltage of less than 4.0 volts and a drive current of approximately 20 milliamps to produce a radiant flux per unit area of at least 270 milliwatts per square millimeter, at a dominant wavelength of between about 395 and 540 nm.

18. A light emitting diode according to claim 17 that operates at forward voltage of less than 3.5 volts.

19. A light emitting diode according to claim 17 that produces a radiant flux per unit area of at least 300 milliwatts per square millimeter.

20. A light emitting diode according to claim 17 that produces a radiant flux per unit area of at least 330 milliwatts per square millimeter.

21. A light emitting diode according to claim 17 that produces a radiant flux per unit area of at least 360 milliwatts per square millimeter.

22. A light emitting diode according to claim 17 that produces a radiant flux per unit area of at least 390 milliwatts per square millimeter.

23. A light emitting diode according to claim 17 comprising a conductive substrate and a Group III nitride active layer.

24. A light emitting diode according to claim 23 wherein said substrate comprises silicon carbide.

25. A light emitting diode according to claim 23 wherein said active layer is selected from the group consisting of gallium nitride, aluminum gallium nitride, indium gallium nitride, and aluminum indium gallium nitride.

26. A light emitting diode according to claim 17 comprising:

a 5 mm (T1¾

) polymeric package;

a die in said package with an area of less than 100,000 square microns;

a substrate with oblique surfaces that increase light output by reducing internal reflection; and

a wire bond pad on the substrate.

27. A light emitting diode according to claim 26 having a dominant wavelength between about 450 and 480 nanometers.

28. A light emitting diode according to claim 26 having a dominant wavelength between about 455 and 465 nanometers.

29. A light emitting diode according to claim 26 wherein the substrate comprises silicon carbide.

30. A light emitting diode according to claim 29 having a flip chip orientation.

31. A light emitting diode comprising:

a polymeric package;

a die in said package with an area of less than 100,000 square microns;

an active structure formed from Group III nitride material, the active structure further comprising a p-type layer at the bottom;

a silver-based mirror layer providing electrical contact with the active structure; and

a barrier layer including a portion that surrounds the silver-based mirror layer and extends to the active structure to prevent reaction of silver with other parts of the light emitting diode,

wherein the light emitting diode is operable with a forward voltage of less than 4.0 volts and a drive current of approximately 20 milliamps to produce a radiant flux per unit area of at least 270 milliwatts per square millimeter, at a dominant wavelength of between about 395 and 540 nm.

32. The light emitting diode of claim 31 further comprising ohmic contacts in a vertical orientation.