Light-emitting device

• US 8,513,699 B2
• Filed: 06/30/2011
• Issued: 08/20/2013
• Est. Priority Date: 01/08/2008
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Hsu, Chia-Liang, Lu, Chih-Chiang, Huang, Chien-Fu, Wu, Chun-Yi
• Primary Examiner(s): Mandala, Victor A
• Assistant Examiner(s): MOORE, WHITNEY
• Application Number:
  US13/174,183
• Publication Number:
  US 20110254046A1
• Time in Patent Office: 782 Days
• Field of Search: 257/98, 257/99, 257/79, 257/88, 257/103, 257/E27.121, 257/E33.066, 257/E33.013
• US Class Current: 257/99
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

Claims

1. A light-emitting device, comprising:

a semiconductor structure;

conductive lines electrically connected to separate portions of the semiconductor structure; and

a light-extraction region having;

tilted sidewalls along which the conductive lines are arranged;

a first surface connected to the semiconductor structure; and

a second surface opposite to the first surface and devoid of the conductive lines,

wherein at least one of the conductive lines is provided directly on at least one of the tilted sidewalls of the light-extraction region.

2. The light-emitting device of claim 1, wherein the titled sidewall is tilted against the first surface or the second surface at an angle between 15 degree and 75 degree.

3. The light-emitting device of claim 1, wherein the titled sidewall is tilted against the first surface or the second surface at an acute angle.

4. The light-emitting device of claim 1, wherein the light-extraction region is wider than the semiconductor structure.

5. The light-emitting device of claim 1, wherein the semiconductor structure is epitaxially formed on the light-extraction region.

6. The light-emitting device of claim 1, further comprising an isolation layer between the semiconductor structure and the conductive line.

7. A light-emitting device, comprising:

a semiconductor structure able to emit light and having a first width, a first portion and a second portion;

a first conductive line electrically connected to the first portion and having at least one bend portion;

a second conductive line electrically connected to the second portion and having a portion that is located at a position that is a shortest distance from the first conductive line, wherein the shortest distance is smaller than the first width; and

a light-extraction region having;

a second width greater than the first width;

a first surface overlaid by the first conductive line;

a second surface opposite to the first surface and devoid of the first conductive line; and

a first sidewall connected to the first surface and the second surface.

8. The light-emitting device of claim 7, wherein the first sidewall is tilted against the first surface or the second surface at an angle between 15 degree and 75 degree.

9. The light-emitting device of claim 7, wherein the first sidewall is tilted against the first surface or the second surface at an acute angle.

10. The light-emitting device of claim 7, wherein the first conductive line is partially arranged along the first sidewall.

11. A light-emitting device comprising:

a semiconductor structure able to emit light and having a first width, a first portion and a second portion;

a first conductive line electrically connected to the first portion and having at least one bend portion;

a second conductive line electrically connected to the second portion, the second conductive line having a portion that is located at a position that is a longest distance from the first conductive line; and

a light-extraction region having;

a second width greater than the first width;

a first surface overlaid by the first conductive line;

a second surface opposite to the first surface and devoid of the first conductive line; and

a first sidewall connected to the first surface and the second surface,

wherein the longest distance is substantially equal to the second width.

12. A light-emitting device, comprising:

a semiconductor structure having a first width, a first portion and a second portion;

a first conductive line electrically connected to the first portion and having a first bend portion;

a second conductive line electrically connected to the second portion; and

a light-extraction region having a second width greater than the first width, a first surface near the semiconductor structure and not parallel to the first bend portion, and a second surface far from the semiconductor structure.

13. The light-emitting device of claim 12, wherein the second conductive line has a second bend portion, and wherein the first bend portion is not parallel to the second bend portion.

14. The light-emitting device of claim 12, wherein the second conductive line has a second bend portion, and wherein the first surface is not parallel to the second bend portion.

15. The light-emitting device of claim 12, wherein the second conductive line has a second bend portion, and wherein the first bend portion and the second bend portion have different elevations.

16. The light-emitting device of claim 12, wherein the second conductive line has a portion that is located at a position that is a shortest distance from the first conductive line, and wherein the shortest distance is smaller than the first width.

17. The light-emitting device of claim 12, wherein the second conductive line has a portion that is located at a position that is a longest distance from the first conductive line, and wherein the longest distance is substantially equal to the second width.

18. The light-emitting device of claim 12, wherein the second conductive line has a second bend portion.