Capacitor and semiconductor device including dielectric and N-type semiconductor
First Claim
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1. A capacitor comprising:
- a dielectric; and
an n-type semiconductor provided in contact with one surface of the dielectric,wherein the n-type semiconductor includes nitrogen and at least one of indium, tin, and zinc, andwherein the n-type semiconductor has a work function of 5.0 eV or higher.
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Abstract
A capacitor that has an electrode of an n-type semiconductor that is provided in contact with one surface of a dielectric, has a work function of 5.0 eV or higher, preferably 5.5 eV or higher, and includes nitrogen and at least one of indium, tin, and zinc. Since the electrode has a high work function, the dielectric can have a high potential barrier, and thus even when the dielectric is as thin as 10 nm or less, a sufficient insulating property can be maintained. In particular, a striking effect can be obtained when the dielectric is formed of a high-k material.
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Citations
18 Claims
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1. A capacitor comprising:
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a dielectric; and an n-type semiconductor provided in contact with one surface of the dielectric, wherein the n-type semiconductor includes nitrogen and at least one of indium, tin, and zinc, and wherein the n-type semiconductor has a work function of 5.0 eV or higher. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a dielectric; an n-type semiconductor provided in contact with one surface of the dielectric; and a conductive material provided on another surface of the dielectric opposite to the n-type semiconductor, wherein the n-type semiconductor includes nitrogen and at least one of indium, tin, and zinc, and wherein the n-type semiconductor has a work function of 5.0 eV or higher. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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an insulator; an n-type semiconductor film provided on a side surface of the insulator; and a dielectric film formed over the n-type semiconductor film, wherein the n-type semiconductor film includes nitrogen and at least one of indium, tin, and zinc, and wherein the n-type semiconductor film has a work function of 5.0 eV or higher. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification