Compact multi-port CAM cell implemented in 3D vertical integration

• US 8,513,791 B2
• Filed: 05/18/2007
• Issued: 08/20/2013
• Est. Priority Date: 05/18/2007
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Bucki, Robert J., Atwal, Jagreet S., Barnes, Joseph S., Bernstein, Kerry, Robinson, Eric
• Primary Examiner(s): Lee, Eugene
• Assistant Examiner(s): Jiang, Fang-Xing
• Application Number:
  US11/750,631
• Publication Number:
  US 20080283995A1
• Time in Patent Office: 2,286 Days
• Field of Search: 257/E23.085, 257/E23.169, 257 67- 74, 257/690, 257/316, 257/686, 257/E21.614, 326/39, 438/109, 365/154, 365/49
• US Class Current: 257/686
• CPC Class Codes: G11C 15/00 Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/80001 by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
• CPC Class Codes: H01L 2224/80896 between electrically insulating surfaces, e.g. oxide or nitride layers
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/8203 Reshaping, e.g. forming vias
• CPC Class Codes: H01L 2224/821 Forming a build-up interconnect
• CPC Class Codes: H01L 2224/83894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 2224/9202 Forming additional connectors after the connecting process
• CPC Class Codes: H01L 2224/9212 Sequential connecting processes
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance

Abstract

A multi-ported CAM cell in which the negative effects of increased travel distance have been substantially reduced is provided. The multi-ported CAM cell is achieved in the present invention by utilizing three-dimensional integration in which multiple active circuit layers are vertically stack and vertically aligned interconnects are employed to connect a device from one of the stacked layers to another device in another stack layer. By vertically stacking multiple active circuit layers with vertically aligned interconnects, each compare port of the multi-port CAM can be implemented on a separate layer above or below the primary data storage cell. This allows the multi-port CAM structure to be implemented within the same area footprint as a standard Random Access Memory (RAM) cell, minimizing data access and match compare delays. Each compare match line and data bit line has the length associated with a simple two-dimensional Static Random Access Memory (SRAM) cell array.

Claims

1. A Content Addressable Memory-based (CAM-based) cache comprising an array of multi-ported Content Addressable Memory (CAM) cells, wherein each multi-ported CAM cell in said array includes:

a storage element located on a first semiconductor layer and comprising a first set of complementary metal oxide semiconductor (CMOS) transistors having a 6T configuration including two inverters each having a first conductivity transistor and a second conductivity transistor, wherein the two inverters provide a first storage node and a second storage node, wherein access to each of the first storage node and the second storage node is provided by a pass gate transistor that is in contact with a write word line;

a compare element located on a second semiconductor layer and comprising a second set of CMOS transistors having a 9T configuration with first conductivity compare element transistors and second conductivity compare element transistors;

at least one first dielectric material located on and above said first semiconductor layer, wherein the at least one first dielectric material contains a portion of the write word line and a read word line;

a match line embedded in at least one second dielectric material located on and above said second semiconductor layer, wherein the match line is in contact with at least one of the second set of CMOS transistors having the 9T configuration; and

at least one vertical interconnect structure interconnecting said storage element and said compare element through said at least one first dielectric material and said at least one second dielectric material and through one of said first and second semiconductor layers, wherein one of the at least one vertical interconnect structures extends from a first of the first conductivity compare element transistors to the first conductivity transistor of the first storage node, a second of the at least one vertical interconnect structures extends from a first of the second conductivity compare elements transistor to the second conductivity transistor of the first storage node, a third of the at least one vertical interconnect structures extends from a second of the first conductivity compare elements transistor to the first conductivity transistor of the second storage node, and a fourth of the at least one vertical interconnect structures extends from a second of the second conductivity compare elements transistor to the second conductivity transistor of the second storage node, wherein the CMOS transistors having the 6T configuration are within an area footprint defined by the CMOS transistors having the 9T configuration.

2. The CAM-based cache of claim 1 wherein said compare element is located above said storage element.

3. The CAM-based cache of claim 1 wherein said at least one vertical interconnect structure passes through a buried insulating layer directly beneath one of said first and second semiconductor layers.

4. The CAM-based cache of claim 1 further comprising:

read and write control logic devices located on said first semiconductor layer and configured to control read and write operations of storage elements in said array; and

a set of devices comprising devices for providing control logic for match lines, match data line drivers, and clocking devices, wherein said set of devices is located on said second semiconductor layer.

5. The CAM-based cache of claim 1 wherein said at least one second dielectric material contacts surfaces of at least one transistor in said second set of CMOS transistors, and said at least one first dielectric material contacts surfaces of at least one transistor in said first set of CMOS transistors.

6. The CAM-based cache of claim 1 wherein said second semiconductor layer is a top, active semiconductor layer of a semiconductor-on-insulator (SOI) substrate, and said first semiconductor layer is a top, active semiconductor layer of another semiconductor-on-insulator (SOI) substrate.

7. The CAM-based cache of claim 6 wherein a buried insulating layer is located directly beneath said top, active semiconductor layer of said SOI substrate, and another buried insulating layer is located directly beneath said top, active semiconductor layer of said another SOI substrate.

8. The CAM-based cache of claim 1 further comprising:

a first power distribution structure configured to power said storage element at a first voltage; and

a second power distribution structure configured to power said compare element at a second voltage, wherein said second voltage is different from said first voltage.

9. The CAM-based cache of claim 6 wherein said at least one second dielectric material contacts surfaces of at least one transistor in said second set of CMOS transistors, and said at least one first dielectric material contacts surfaces of at least one transistor in said first set of CMOS transistors.

10. The CAM-based cache of claim 1 wherein the at least one vertical interconnect structure is configured to pass signals from said compare element and said storage element.

11. The CAM-based cache of claim 1 wherein each multi-ported CAM cell in said array further includes:

another compare element located on a third semiconductor layer and comprising a third set of CMOS transistors;

another read word line and another write word line embedded in at least one third dielectric material located on and above said third semiconductor layer; and

at least another vertical interconnect structure interconnecting said storage element and said another compare element through said at least one first dielectric material and said at least one third dielectric material and through one of said first and third semiconductor layers.