Methods and apparatus for tuning matching networks
First Claim
1. A method of tuning a matching network during a plasma process, comprising:
- (a) providing a matching network coupling an RF source to a load, the matching network having a first tunable element disposed at a first set point;
(b) increasing a value of the first tunable element by a first step above the first set point;
(c) sensing a first adjusted value of a reflected RF power;
(d) decreasing the value of the first tunable element by the first step below the first set point;
(e) sensing a second adjusted value of the reflected RF power;
(f) comparing the first and the second adjusted values of the reflected RF power; and
(g) moving the first tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power.
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Accused Products
Abstract
Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range.
58 Citations
20 Claims
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1. A method of tuning a matching network during a plasma process, comprising:
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(a) providing a matching network coupling an RF source to a load, the matching network having a first tunable element disposed at a first set point; (b) increasing a value of the first tunable element by a first step above the first set point; (c) sensing a first adjusted value of a reflected RF power; (d) decreasing the value of the first tunable element by the first step below the first set point; (e) sensing a second adjusted value of the reflected RF power; (f) comparing the first and the second adjusted values of the reflected RF power; and (g) moving the first tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A non-transitory computer readable medium, having instructions stored thereon which, when executed by a controller, performs a method that causes the tuning of a match network, the match network coupling an RF source to a load and having a tunable element disposed at a first set point, the method further comprising:
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(a) increasing a value of the tunable element by a first step above the first set point; (b) sensing a first adjusted value of a reflected RF power; (c) decreasing the value of the tunable element by the first step below the first set point; (d) sensing a second adjusted value of the reflected RF power; (e) comparing the first and the second adjusted values of the reflected RF power; and (f) moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A system for plasma processing of a substrate, comprising:
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a process chamber for processing a substrate; a first RF source coupled to the process chamber through a first matching network coupled; a second RF source coupled to the process chamber through a second matching network; and a controller comprising computer readable medium having instructions stored thereon that, when executed, performs a method that causes the controller to tune the first matching network and the second matching network to a load during a plasma process, wherein the first matching network coupled the first RF source to the load and includes a first tunable element disposed at a first set point, and wherein the method further comprises; (a) increasing a value of the first tunable element by a first step above the first set point; (b) sensing a first adjusted value of a reflected RF power; (c) decreasing the value of the first tunable element by the first step below the first set point; (d) sensing a second adjusted value of the reflected RF power; (e) comparing the first and the second adjusted values of the reflected RF power; and (f) moving the first tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power.
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Specification