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RF isolation switch circuit

  • US 8,514,008 B2
  • Filed: 09/16/2010
  • Issued: 08/20/2013
  • Est. Priority Date: 07/28/2010
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a main N-channel transistor having a first terminal, a second terminal, and a gate terminal and configured for passing a Radio Frequency (RF) signal;

    a first turn-off N-channel transistor having a first terminal, a second terminal, and a gate terminal, wherein the second terminal of the first turn-off N-channel transistor is coupled to the gate terminal of the main N-channel transistor;

    a second turn-off N-channel transistor having a first terminal, a second terminal, and a gate terminal, wherein the second terminal of the second turn-off N-channel transistor is coupled to the first terminal of the first turn-off N-channel transistor, and wherein the first terminal of the second turn-off N-channel transistor is coupled to the first terminal of the main N-channel transistor; and

    a first control conductor, wherein the main transistor is turned off when a first digital control signal on the first control conductor has a first digital logic value, and wherein the main transistor is turned on when the first digital control signal on the first control conductor has a second digital logic value opposite the first digital logic value.

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