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Semiconductor device and method of manufacturing the same, and electronic apparatus

  • US 8,514,308 B2
  • Filed: 12/08/2010
  • Issued: 08/20/2013
  • Est. Priority Date: 12/25/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first semiconductor section (1) including a first wiring layer at one side thereof and (2) having a circuit region and a pixel region;

    a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other;

    an insulation layer and a planarizing layer on another side of the first semiconductor section in that order, the planarizing layer having a concavity in an outer surface thereof, the concavity being outside of the circuit and pixel regions; and

    a conductive material extending from the concavity and through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication.

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