Semiconductor device

• US 8,514,341 B2
• Filed: 12/27/2010
• Issued: 08/20/2013
• Est. Priority Date: 09/15/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Higaki, Yoshinari, Sakakura, Masayuki, Yamazaki, Shunpei
• Primary Examiner(s): Wong, Tina
• Application Number:
  US12/978,844
• Publication Number:
  US 20110140120A1
• Time in Patent Office: 967 Days
• Field of Search: None
• US Class Current: 349/46
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78669 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]

Abstract

It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.

Claims

1. A semiconductor device comprising:

a thin film transistor over a substrate;

a first conductive layer over the thin film transistor, the first conductive layer being in contact with a semiconductor film of the thin film transistor;

a second conductive layer in direct contact with the first conductive layer; and

a transparent conductive film over the second conductive layer,

wherein the transparent conductive film is in contact with a part of the first conductive layer extending from an end portion of the second conductive layer.

2. The semiconductor device according to claim 1, further comprising:

a light-emitting element in which the transparent conductive film serves as an anode or a cathode.

3. The semiconductor device according to claim 1, further comprising:

a liquid crystal element in which the transparent conductive film serves as a pixel electrode.

4. The semiconductor device according to claim 1, wherein the transparent conductive film is formed with ITO or IZO.

5. The semiconductor device according to claim 1, wherein a surface of the second conductive layer is covered with an insulating film.

6. The semiconductor device according to claim 1, wherein the first conductive layer and the second conductive layer are formed continuously in a same sputtering apparatus.

7. The semiconductor device according to claim 1, wherein the semiconductor device is a mobile information terminal, a video camera, a digital camera, or a personal computer.

8. The semiconductor device according to claim 1, further comprising:

an insulating layer including a contact hole over the semiconductor film;

wherein the first conductive layer is formed over the insulating layer and is in contact with the semiconductor film through the contact hole.

9. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor film, a gate electrode comprising a first conductive layer and a second conductive layer formed on the first conductive layer, and a gate insulating film interposed between the semiconductor film and the gate electrode;

a third conductive layer over the thin film transistor, the third conductive layer being in contact with the semiconductor film;

a fourth conductive layer on the third conductive layer; and

a transparent conductive film over the thin film transistor,

wherein the third conductive layer has a portion projected from an end portion of the fourth conductive layer,

wherein the transparent conductive film is in contact with the portion of the third conductive layer projected from the end portion of the fourth conductive layer,

wherein the third conductive layer comprises titanium or molybdenum,

wherein the fourth conductive layer comprises aluminum, and

wherein the fourth conductive layer is not in contact with the transparent conductive film.

10. The semiconductor device according to claim 9, further comprising:

a light-emitting element in which the transparent conductive film serves as an anode or a cathode.

11. The semiconductor device according to claim 9, further comprising:

a liquid crystal element in which the transparent conductive film serves as a pixel electrode.

12. The semiconductor device according to claim 9, wherein the transparent conductive film is formed with ITO or IZO.

13. The semiconductor device according to claim 9, wherein a surface of the fourth conductive layer is covered with an insulating film.

14. The semiconductor device according to claim 9, wherein the third conductive layer and the fourth conductive layer are formed continuously in a same sputtering apparatus.

15. The semiconductor device according to claim 9, wherein the semiconductor device is a mobile information terminal, a video camera, a digital camera, or a personal computer.

16. The semiconductor device according to claim 9, further comprising:

an insulating layer including a contact hole over the semiconductor film;

wherein the third conductive layer is formed over the insulating layer and is in contact with the semiconductor film through the contact hole.

17. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor film, a gate electrode comprising a first conductive layer and a second conductive layer formed on the first conductive layer, and a gate insulating film interposed between the semiconductor film and the gate electrode;

a third conductive layer over the thin film transistor, the third conductive layer being in contact with the semiconductor film;

a fourth conductive layer on the third conductive layer; and

a flattening insulating film over the fourth conductive layer;

a transparent conductive film over the flattening insulating film,

wherein the third conductive layer has a portion projected from an end portion of the fourth conductive layer,

wherein the third conductive layer is in contact with the transparent conductive film through a contact hole provided in the flattening insulating film,

wherein the end portion of the third conductive layer is located within the contact hole,

wherein the third conductive layer comprises titanium or molybdenum,

wherein the fourth conductive layer comprises aluminum, and

wherein the fourth conductive layer is not in contact with the transparent conductive film.

18. The semiconductor device according to claim 17, further comprising:

a light-emitting element in which the transparent conductive film serves as an anode or a cathode.

19. The semiconductor device according to claim 17, further comprising:

a liquid crystal element in which the transparent conductive film serves as a pixel electrode.

20. The semiconductor device according to claim 17, wherein the transparent conductive film is formed with ITO or IZO.

21. The semiconductor device according to claim 17, wherein a surface of the fourth conductive layer is covered with an insulating film.

22. The semiconductor device according to claim 17, wherein the third conductive layer and the fourth conductive layer are formed continuously in a same sputtering apparatus.

23. The semiconductor device according to claim 17, wherein the semiconductor device is a mobile information terminal, a video camera, a digital camera, or a personal computer.

24. The semiconductor device according to claim 17, further comprising:

an insulating layer including a contact hole over the semiconductor film;

wherein the third conductive layer is formed over the insulating layer and is in contact with the semiconductor film through the contact hole.

25. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor film, a gate electrode comprising a first conductive layer and a second conductive layer formed on the first conductive layer, and a gate insulating film interposed between the semiconductor film and the gate electrode;

a third conductive layer over the thin film transistor, the third conductive layer being in contact with the semiconductor film;

a fourth conductive layer on the third conductive layer; and

a transparent conductive film over the thin film transistor,

wherein the transparent conductive film is in contact with a part of the third conductive layer extending from an end portion of the fourth conductive layer,

wherein the third conductive layer has a larger width than the fourth conductive layer,

wherein the first conductive layer comprises titanium,

wherein the second conductive layer comprises copper,

wherein the third conductive layer comprises titanium or molybdenum,

wherein the fourth conductive layer comprises aluminum, and

wherein the fourth conductive layer is not in contact with the transparent conductive film.

26. The semiconductor device according to claim 25, further comprising:

a light-emitting element in which the transparent conductive film serves as an anode or a cathode.

27. The semiconductor device according to claim 25, further comprising:

a liquid crystal element in which the transparent conductive film serves as a pixel electrode.

28. The semiconductor device according to claim 25, wherein the transparent conductive film is formed with ITO or IZO.

29. The semiconductor device according to claim 25, wherein a surface of the fourth conductive layer is covered with an insulating film.

30. The semiconductor device according to claim 25, wherein the third conductive layer and the fourth conductive layer are formed continuously in a same sputtering apparatus.

31. The semiconductor device according to claim 25, wherein the semiconductor device is a mobile information terminal, a video camera, a digital camera, or a personal computer.

32. The semiconductor device according to claim 25, further comprising:

an insulating layer including a contact hole over the semiconductor film;

wherein the third conductive layer is formed over the insulating layer and is in contact with the semiconductor film through the contact hole.

33. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor thin film, a gate electrode comprising a first conductive layer and a second conductive layer;

a third conductive layer over the thin film transistor, the third conductive layer being in contact with the semiconductor thin film;

a fourth conductive layer on the third conductive layer; and

a transparent conductive film over the thin film transistor,

wherein the first conductive layer has a first tapered angle and the second conductive layer has a second tapered angle,

wherein the first tapered angle is different from the second tapered angle,

wherein the third conductive layer has a larger width than the fourth conductive layer,

wherein the transparent conductive film is in contact with a part of the third conductive layer extending from an end portion of the fourth conductive layer,

wherein the third conductive layer comprises titanium or molybdenum,

wherein the fourth conductive layer comprises aluminum, and

wherein the fourth conductive layer is not in contact with the transparent conductive film.

34. The semiconductor device according to claim 33, further comprising:

a light-emitting element in which the transparent conductive film serves as an anode or a cathode.

35. The semiconductor device according to claim 33, further comprising:

a liquid crystal element in which the transparent conductive film serves as a pixel electrode.

36. The semiconductor device according to claim 33, wherein the transparent conductive film is formed with ITO or IZO.

37. The semiconductor device according to claim 33, wherein a surface of the fourth conductive layer is covered with an oxide film.

38. The semiconductor device according to claim 33, wherein the third conductive layer and the fourth conductive layer are formed continuously in a same sputtering apparatus.

39. The semiconductor device according to claim 33, wherein the semiconductor device is a mobile information terminal, a video camera, a digital camera, or a personal computer.

40. The semiconductor device according to claim 33, further comprising:

a flattening insulating layer including a contact hole over the semiconductor thin film,

wherein the third conductive layer is formed over the flattening insulating layer and is in contact with the semiconductor thin film through the contact hole.

41. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor thin film, a gate electrode comprising a first conductive layer and a second conductive layer;

a third conductive layer over the thin film transistor, the third conductive layer being in contact with the semiconductor thin film;

a fourth conductive layer on the third conductive layer; and

a transparent conductive film over the thin film transistor,

wherein the first conductive layer has a first tapered angle and the second conductive layer has a second tapered angle,

wherein the first tapered angle is different from the second tapered angle,

wherein the third conductive layer has a portion projected from an end portion of the fourth conductive layer,

wherein the transparent conductive film is in contact with the portion of the third conductive layer projected from the end portion of the fourth conductive layer,

wherein the third conductive layer comprises titanium or molybdenum,

wherein the fourth conductive layer comprises aluminum, and

wherein the fourth conductive layer is not in contact with the transparent conductive film.

42. The semiconductor device according to claim 41, further comprising:

a light-emitting element in which the transparent conductive film serves as an anode or a cathode.

43. The semiconductor device according to claim 41, further comprising:

a liquid crystal element in which the transparent conductive film serves as a pixel electrode.

44. The semiconductor device according to claim 41, wherein the transparent conductive film is formed with ITO or IZO.

45. The semiconductor device according to claim 41, wherein a surface of the fourth conductive layer is covered with an oxide film.

46. The semiconductor device according to claim 41, wherein the third conductive layer and the fourth conductive layer are formed continuously in a same sputtering apparatus.

47. The semiconductor device according to claim 41, wherein the semiconductor device is a mobile information terminal, a video camera, a digital camera, or a personal computer.

48. The semiconductor device according to claim 41, further comprising:

a flattening insulating layer including a contact hole over the semiconductor thin film,

wherein the third conductive layer is formed over the flattening insulating layer and is in contact with the semiconductor thin film through the contact hole.

49. A semiconductor device comprising:

a thin film transistor over a substrate, the thin film transistor comprising a semiconductor thin film, a gate electrode comprising a first conductive layer and a second conductive layer;

a third conductive layer over the thin film transistor, the third conductive layer being in contact with the semiconductor thin film;

a fourth conductive layer on the third conductive layer;

a flattening insulating film over the fourth conductive layer; and

a transparent conductive film over the flattening insulating film,

wherein the first conductive layer has a first tapered angle and the second conductive layer has a second tapered angle,

wherein the first tapered angle is different from the second tapered angle,

wherein the third conductive layer has a portion projected from an end portion of the fourth conductive layer,

wherein the third conductive layer is in contact with the transparent conductive film through a contact hole provided in the flattening insulating film,

wherein an end portion of the third conductive layer is located within the contact hole,

wherein the third conductive layer comprises titanium or molybdenum,

wherein the fourth conductive layer comprises aluminum, and

wherein the fourth conductive layer is not in contact with the transparent conductive film.

50. The semiconductor device according to claim 49, further comprising:

a light-emitting element in which the transparent conductive film serves as an anode or a cathode.

51. The semiconductor device according to claim 49, further comprising:

a liquid crystal element in which the transparent conductive film serves as a pixel electrode.

52. The semiconductor device according to claim 49, wherein the transparent conductive film is formed with ITO or IZO.

53. The semiconductor device according to claim 49, wherein a surface of the fourth conductive layer is covered with an oxide film.

54. The semiconductor device according to claim 49, wherein the third conductive layer and the fourth conductive layer are formed continuously in a same sputtering apparatus.

55. The semiconductor device according to claim 49, wherein the semiconductor device is a mobile information terminal, a video camera, a digital camera, or a personal computer.

56. The semiconductor device according to claim 49, further comprising:

a flattening insulating layer including a contact hole over the semiconductor thin film,

wherein the third conductive layer is formed over the flattening insulating layer and is in contact with the semiconductor thin film through the contact hole.