Integrated silicon-based nonlinear photodetector

• US 8,515,216 B2
• Filed: 11/03/2009
• Issued: 08/20/2013
• Est. Priority Date: 11/04/2008
• Status: Active Grant

• Current Assignee: Massachusetts Institute of Technology
• Original Assignee: Massachusetts Institute of Technology
• Inventors: Abad, Jorge Bravo, Ippen, Erich P., Soljacic, Marin
• Primary Examiner(s): Lepisto, Ryan
• Assistant Examiner(s): BLEVINS, JERRY M
• Application Number:
  US12/611,287
• Publication Number:
  US 20100166364A1
• Time in Patent Office: 1,386 Days
• Field of Search: 385/14, 385/5, 385/31
• US Class Current: 385/14
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: H01L 31/101 Devices sensitive to infrared, visible or ultraviolet radiation

Abstract

Disclosed is a system including an integrated silicon-based structure including a microcavity configured to receive optical energy from an input beam carrying an optical signal and absorb the optical energy by a nonlinear multi-photon absorption process. For example, the multi-photon absorption process can be two-photon absorption (TPA). The integrated silicon-based structure further includes electrodes responsive to the nonlinear multi-photon absorption process in the microcavity for producing an electronic signal indicative of the optical signal. A related method is also disclosed.

Claims

1. A system comprising:

an integrated silicon-based structure comprising an optical waveguide for receiving an input beam carrying an optical signal and a microcavity optically coupled to the waveguide and configured to receive optical energy from the input beam and absorb the optical energy by a nonlinear multi-photon absorption process,

the integrated silicon-based structure further comprising electrodes responsive to the nonlinear multi-photon absorption process in the microcavity for producing an electronic signal indicative of the optical signal.

2. The system of claim 1, wherein the microcavity comprises silicon and wherein the nonlinear multi-photon absorption process is in the silicon.

3. The system of claim 1, wherein the microcavity has a resonant frequency ω

₀, a quality factor Q, and a modal volume V_MODE, and wherein the input beam carrying the optical signal has a wavelength in air equal to λ

_AIR, with 1.2 μ

m<

λ

_AIR<

2.4 μ

m.

4. The system of claim 3, wherein Q>

100 and V_MODE<

1000 λ

_AIR³.

5. The system of claim 4, wherein Q>

1000 and V_MODE<

100 λ

_AIR³.

6. The system of claim 5, wherein V_MODE<

10 λ

_AIR³.

7. The system of claim 4, wherein the input beam carrying the optical signal has a carrier frequency equal to ω

, and wherein |ω

−

ω

₀|/ω

₀<

10/Q.

8. The system of claim 7, wherein the input beam carrying the optical signal has a carrier frequency equal to ω

, and wherein |ω

−

ω

₀|/ω

₀<

5/Q.

9. The system of claim 8, wherein the input beam carrying the optical signal has a carrier frequency equal to ω

, and wherein |ω

−

ω

₀|/ω

₀<

1/Q.

10. The system of claim 1, wherein the microcavity has a resonant frequency ω

₀, a quality factor Q, and a modal volume V_MODE, and wherein the system further comprises a source for the input beam, and wherein the input beam carrying the optical signal has a wavelength in air equal to λ

_AIR.

11. The system of claim 1, wherein the microcavity is configured to achieve a conversion efficiency for the multi-photon absorption of the optical energy in the input beam of greater than 15% for an input beam power smaller than 0.2 mW.

12. The system of claim 1, wherein the microcavity is a photonic crystal structure.

13. The system of claim 1, wherein the waveguide is a photonic crystal structure.

14. The system of claim 1, wherein the integrated silicon-based structure is implemented in a Complementary metal-oxide-semiconductor (CMOS) platform.

15. The system of claim 1, wherein the input beam carrying the optical signal has a carrier frequency equal to ω

, wherein N photons, with N>

1, are absorbed simultaneously by a material in the microcavity during the multi-photon absorption process, and wherein the multi-photon absorption material has an indirect electronic bandgap E_g larger than the energy corresponding to a single photon of frequency ω and

smaller than the energy of the N photons absorbed simultaneously by the material.

16. The system of claim 1, wherein the integrated silicon-based structure further comprises an output optical waveguide optically coupled to the microcavity and configured to output optical energy from the microcavity that is not absorbed by the multi-photon absorption process.

17. The system of claim 1, wherein the multi-photon absorption process is a two-photon absorption (TPA).

18. The system of claim 1, wherein the integrated silicon-based structure comprises multiple microcavities each optically coupled to the waveguide and configured to receive optical energy from the input beam and absorb the optical energy by a nonlinear multi-photon absorption process.

19. The system of claim 1, further comprising an external voltage source configured to apply an external voltage across the electrodes to extract a photocurrent from the integrated silicon-based structure in response to the non-linear multi-photon absorption process and produce the electronic signal indicative of the optical signal.

20. The system of claim 19, wherein the external voltage is configured to enable an electrical readout of the optical signal.

21. The system of claim 19, wherein the external voltage applied across the electrodes causes the integrated silicon-based structure to form a reversed biased p-i-n junction.

22. The system of claim 21, wherein the reversed biased p-i-n junction sweeps out free carriers generated inside the microcavity.

23. Apparatus comprising:

an integrated silicon-based structure comprising an optical waveguide for receiving an input beam carrying an optical signal and a microcavity optically coupled to the waveguide and configured to receive optical energy from the input beam and absorb the optical energy by a nonlinear multi-photon absorption process,

the integrated silicon-based structure further comprising electrodes responsive to the nonlinear multi-photon absorption process in the microcavity for producing an electronic signal indicative of the optical signal,

wherein the microcavity comprises silicon and wherein the nonlinear multi-photon absorption process is in the silicon, and

wherein the micro cavity has a resonant frequency ω

₀, a quality factor Q, and a modal volume V_MODE, and wherein the input beam carrying the optical signal has a wavelength in air equal to λ

_AIR, with 1.2 μ

m<

λ

_AIR<

2.4 μ

m, and wherein Q>

100 and V_MODE<

1000 λ

_AIR³.

24. The apparatus of claim 23, further comprising an external voltage source configured to apply an external voltage across the electrodes to extract a photocurrent from the integrated silicon-based structure in response to the non-linear multi-photon absorption process and produce the electronic signal indicative of the optical signal.

25. The apparatus of claim 24, wherein the external voltage is configured to enable an electrical readout of the optical signal.

26. The apparatus of claim 24, wherein the external voltage applied across the electrodes causes the integrated silicon-based structure to form a reversed biased p-i-n junction.

27. The apparatus of claim 26, wherein the reversed biased p-i-n junction sweeps out free carriers generated inside the microcavity.

28. A system comprising:

an integrated silicon-based structure comprising a micro cavity configured to receive optical energy from an input beam carrying an optical signal and absorb the optical energy by a nonlinear multi-photon absorption process,

the integrated silicon-based structure further comprising electrodes responsive to the nonlinear multi-photon absorption process in the microcavity for producing an electronic signal indicative of the optical signal,

wherein the microcavity comprises silicon and wherein the nonlinear multi-photon absorption process is in the silicon.

29. The system of claim 28, wherein the integrated silicon-based structure further comprises an optical waveguide for receiving the input beam carrying an optical signal, and wherein the microcavity is optically coupled to the waveguide to receive the optical energy from the input beam.

30. The system of claim 28, further comprising an external voltage source configured to apply an external voltage across the electrodes to extract a photocurrent from the integrated silicon-based structure in response to the non-linear multi-photon absorption process and produce the electronic signal indicative of the optical signal.

31. The system of claim 30, wherein the external voltage is configured to enable an electrical readout of the optical signal.

32. The system of claim 30, wherein the external voltage applied across the electrodes causes the integrated silicon-base structure to form a reversed biased p-i-n junction.

33. The system of claim 32, wherein the reversed biased p-i-n junction sweeps out free carriers generated inside the microcavity.