Semiconductor device

• US 8,517,275 B2
• Filed: 12/20/2007
• Issued: 08/27/2013
• Est. Priority Date: 12/27/2006
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsuchiya, Kaoru
• Primary Examiner(s): Lee, Michael G
• Assistant Examiner(s): CHEDEKEL, TABITHA F
• Application Number:
  US12/003,147
• Publication Number:
  US 20080156886A1
• Time in Patent Office: 2,077 Days
• Field of Search: 235/492, 235/487, 257/528, 257/723, 257/724, 257/728, 438/19
• US Class Current: 235/492
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card

Abstract

A semiconductor device that is resistant to bending stress and has a structure in which an antenna circuit, an electric double layer capacitor for storing electricity, and the like are formed over a signal processing circuit that is provided over a substrate and has a charging circuit. The signal processing circuit having the charging circuit is provided over a substrate, and the antenna circuit and the electric double layer capacitor are provided over the signal processing circuit. The antenna circuit is electrically connected to the signal processing circuit, and the electric double layer capacitor is electrically connected to the charging circuit. With such a structure, a wiring for connecting the charging circuit and the electric double layer capacitor can be made short. Accordingly, a semiconductor device that is resistant to bending stress can be provided.

Claims

1. A semiconductor device comprising:

a signal processing circuit having a charging circuit;

an insulating film over the signal processing circuit;

a first conductive layer over the insulating film;

a second conductive layer over the insulating film; and

an electric double layer capacitor over the insulating film,

wherein;

the second conductive layer is electrically connected to the signal processing circuit,

the electric double layer capacitor is directly connected to the charging circuit,

the charging circuit is configured to charge the electric double layer capacitor,

the charging circuit includes a regulator for controlling voltage and a diode having a rectification property,

the second conductive layer is configured to receive a wireless signal,

the first conductive layer and the electric double layer capacitor are provided over and in direct contact with a surface of the insulating film, and

the second conductive layer is provided over and in direct contact with the first conductive layer and the surface of the insulating film.

2. The semiconductor device according to claim 1, wherein the electric double layer capacitor is positioned to overlap with the charging circuit.

3. The semiconductor device according to claim 1,

wherein:

the electric double layer capacitor includes at least a first electrode, a second electrode, and an electrolyte solution layer between the first electrode and the second electrode,

the first electrode is electrically connected to the charging circuit, and

a layer made of a material selected from the group consisting of activated carbon, fullerene, and carbon nanotube is provided on at least one of the first electrode and the second electrode.

4. The semiconductor device according to claim 1,

wherein:

the electric double layer capacitor includes at least a first electrode, a second electrode, and an electrolyte solution layer between the first electrode and the second electrode,

the first electrode is electrically connected to the charging circuit, and

at least one of the first electrode and the second electrode is formed from a material selected from the group consisting of activated carbon, fullerene, and carbon nanotube.

5. The semiconductor device according to claim 1,

wherein:

the electric double layer capacitor includes at least a first electrode, a second electrode, and an electrolyte solution layer between the first electrode and the second electrode, and

the electrolyte solution layer includes a separator.

6. A semiconductor device comprising:

a signal processing circuit over a first flexible substrate and having a charging circuit;

an insulating film over the signal processing circuit;

a first conductive layer over the insulating film;

a second conductive layer over the insulating film;

an electric double layer capacitor over the insulating film; and

a second flexible substrate over the second conductive layer and the electric double layer capacitor,

wherein;

the second conductive layer is electrically connected to the signal processing circuit,

the electric double layer capacitor is directly connected to the charging circuit,

the charging circuit is configured to charge the electric double layer capacitor,

the charging circuit includes a regulator for controlling voltage and a diode having a rectification property,

the second conductive layer is configured to receive a wireless signal,

the first conductive layer and the electric double layer capacitor are provided over and in direct contact with a surface of the insulating film, and

the second conductive layer is provided over and in direct contact with the first conductive layer and the surface of the insulating film.

7. The semiconductor device according to claim 6, wherein the electric double layer capacitor is positioned to overlap with the charging circuit.

8. The semiconductor device according to claim 6,

wherein:

the electric double layer capacitor includes at least a first electrode, a second electrode, and an electrolyte solution layer between the first electrode and the second electrode,

the first electrode is electrically connected to the charging circuit, and

a layer made of a material selected from the group consisting of activated carbon, fullerene, and carbon nanotube is provided on at least one of the first electrode and the second electrode.

9. The semiconductor device according to claim 6,

wherein:

the electric double layer capacitor includes at least a first electrode, a second electrode, and an electrolyte solution layer between the first electrode and the second electrode,

the first electrode is electrically connected to the charging circuit, and

at least one of the first electrode and the second electrode is formed from a material selected from the group consisting of activated carbon, fullerene, and carbon nanotube.

10. The semiconductor device according to claim 6,

wherein:

the electric double layer capacitor includes at least a first electrode, a second electrode, and an electrolyte solution layer between the first electrode and the second electrode, and

the electrolyte solution layer includes a separator.

11. A semiconductor device comprising:

a signal processing circuit over a first flexible substrate and having a charging circuit;

an insulating film over the signal processing circuit;

a first conductive layer over the insulating film;

a second conductive layer over the insulating film;

a battery over the insulating film; and

a second flexible substrate over the second conductive layer and the battery,

wherein;

the second conductive layer is electrically connected to the signal processing circuit,

the battery is electrically connected to the charging circuit,

the second conductive layer and the battery are provided over the same side of the first flexible substrate, and

the charging circuit includes a regulator for controlling voltage and a diode having a rectification property,

the second conductive layer is configured to receive a wireless signal,

the first conductive layer and the battery are provided over and in direct contact with a surface of the insulating film, and

the second conductive layer is provided over and in direct contact with the first conductive layer and the surface of the insulating film.

12. The semiconductor device according to claim 11, wherein the battery is positioned to overlap with the charging circuit.

13. A semiconductor device comprising:

a signal processing circuit over a first flexible substrate and having a charging circuit, the signal processing circuit including a first thin film transistor, and the charging circuit including a second thin film transistor;

an insulating film over the first thin film transistor and the second thin film transistor;

a first conductive layer over the insulating film;

a second conductive layer over the insulating film;

a battery over the insulating film; and

a second flexible substrate over the second conductive layer and the battery,

wherein;

the second conductive layer is electrically connected to the first thin film transistor through the insulating film,

the battery is electrically connected to the second thin film transistor through the insulating film,

the second conductive layer and the battery are provided over the same side of the first flexible substrate, and

the charging circuit includes a regulator for controlling voltage and a diode having a rectification property,

the second conductive layer is configured to receive a wireless signal,

the first conductive layer and the battery are provided over and in direct contact with a surface of the insulating film, and

the second conductive layer is provided over and in direct contact with the first conductive layer and the surface of the insulating film.

14. The semiconductor device according to claim 13, wherein the battery is positioned to overlap with the charging circuit.