Method of treating a gas stream
First Claim
1. A method of treating a gas containing varying amounts of a halocompound and water vapour, the method comprising the steps of:
- providing a plasma abatement device comprising a gas chamber having a gas inlet for receiving the gas and a gas outlet;
heating a housing of the chamber to a temperature that inhibits adsorption of water on a stainless steel surface within the chamber;
conveying the gas to the gas chamber for treatment thereof within the chamber; and
maintaining the housing of the chamber at or above said temperature during treatment of the gas,wherein the gas is treated at or around atmospheric pressure,wherein the housing of the chamber is maintained within the range from 120°
C. to 180°
C. during treatment of the gas.
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Accused Products
Abstract
A method is described for treating gas exhaust from a polysilicon etch process, which uses a plasma abatement device to treat the gas. The device comprises a stainless steel gas chamber having a gas inlet for receiving the gas and a gas outlet. As the gas may contain a halocompound and water vapor, the chamber is heated to a temperature that inhibits adsorption of water on the surface within the chamber, thereby inhibiting corrosion of the gas chamber. The gas is then conveyed to the gas chamber for treatment, and the temperature of the chamber is maintained above said temperature during treatment of the gas.
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Citations
12 Claims
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1. A method of treating a gas containing varying amounts of a halocompound and water vapour, the method comprising the steps of:
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providing a plasma abatement device comprising a gas chamber having a gas inlet for receiving the gas and a gas outlet; heating a housing of the chamber to a temperature that inhibits adsorption of water on a stainless steel surface within the chamber; conveying the gas to the gas chamber for treatment thereof within the chamber; and maintaining the housing of the chamber at or above said temperature during treatment of the gas, wherein the gas is treated at or around atmospheric pressure, wherein the housing of the chamber is maintained within the range from 120°
C. to 180°
C. during treatment of the gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification