Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer

• US 8,518,204 B2
• Filed: 03/30/2012
• Issued: 08/27/2013
• Est. Priority Date: 11/18/2011
• Status: Expired due to Fees

• Current Assignee: Apple Inc.
• Original Assignee: LuxVue Techonology Corporation (Apple Inc.)
• Inventors: Hu, Hsin-Hua, Bibl, Andreas, Higginson, John A., Law, Hung-Fai Stephen
• Primary Examiner(s): Chan, Sing P
• Application Number:
  US13/436,314
• Publication Number:
  US 20130130440A1
• Time in Patent Office: 515 Days
• Field of Search: 156/230, 156/235, 156/241, 156/249, 156/273.1, 156/273.7, 156/711
• US Class Current: 156/249
• CPC Class Codes: H01L 21/67144 Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
• CPC Class Codes: H01L 2224/7598 specially adapted for batch processes
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: Y10T 156/1153 Temperature change for delamination [e.g., heating during delaminating, etc.]

Abstract

A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.

Claims

1. A method of fabricating a micro device comprising:

bonding a first substrate stack to a second substrate stack with an intermediate electrically conductive bonding layer having a liquidus temperature of 350°

C. or lower;

patterning an active device layer of the first substrate stack to form a plurality of micro devices;

heating a region of the intermediate electrically conductive bonding layer to the liquidus temperature or higher;

picking up one of the plurality of the micro devices and a portion of the intermediate electrically conductive bonding layer with a transfer head;

placing the micro device and the portion of the intermediate electrically conductive bonding layer on an electrically conductive receiving bonding layer on a receiving substrate; and

bonding the intermediate electrically conductive bonding layer to the electrically conductive receiving bonding layer to form a permanent alloy bonding layer having a liquidus temperature above 150°

C.

2. The method of claim 1, wherein the active device layer comprises a p-n diode layer.

3. The method of claim 2, wherein the p-n diode layer includes a quantum well layer.

4. The method of claim 1, wherein the intermediate electrically conductive bonding layer comprises a component selected from the group consisting of indium (In) and tin (Sn).

5. The method of claim 4, wherein the intermediate electrically conductive bonding layer additionally comprises a component selected from the group consisting of bismuth (Bi), silver (Ag), gold (Au), gallium (Ga), zinc (Zn), copper (Cu), aluminum (Al), lead (Pb), and cadmium (Cd).

6. The method of claim 4, wherein the intermediate electrically conductive bonding layer has a liquidus temperature of 200°

C. or lower.

7. The method of claim 1, wherein the electrically conductive receiving bonding layer comprises gold (Au).

8. The method of claim 1, wherein bonding the first substrate stack to the second substrate stack with the intermediate electrically conductive bonding layer comprises:

bonding a first electrically conductive bonding layer of the first substrate stack to a second electrically conductive bonding layer of the second substrate stack to form the intermediate electrically conductive bonding layer.

9. The method of claim 8, wherein the first electrically conductive bonding layer and the second electrically conductive bonding layer are the same material, and bonding the first electrically conductive bonding layer to the second electrically conductive bonding layer comprises fusion bonding.

10. The method of claim 9, wherein the same material comprises a material selected from the group of indium (In) and tin (Sn).

11. The method of claim 8, wherein the first electrically conductive bonding layer and the second electrically conductive bonding layer are different materials, and bonding the first electrically conductive bonding layer to the second electrically conductive bonding layer comprises alloy bonding, and the intermediate electrically conductive bonding layer is an intermediate electrically conductive alloy bonding layer.

12. The method of claim 11, wherein one of the first and second electrically conductive bonding layers has a thickness which is 5% or less a thickness of the other one of the first and second electrically conductive bonding layers.

13. The method of claim 11, wherein the first electrically conductive bonding layer is completely consumed in the alloy bonding layer at locations where the first electrically conductive bonding layer makes contacts with the second electrically conductive bonding layer.

14. The method of claim 11, wherein bonding the first electrically conductive bonding layer to the second electrically conductive bonding layer comprises maintaining the first and second electrically conductive bonding layers at an elevated temperature above a liquidus temperature of one of the first and second electrically conductive bonding layers.

15. The method of claim 1, wherein picking up comprises exerting a pick up pressure on the micro device with the transfer head in accordance with electrostatic principles.

16. The method of claim 1, wherein heating the region of the intermediate electrically conductive bonding layer to the liquidus temperature or higher comprises transferring heat to the intermediate electrically conductive bonding layer with the transfer head.

17. The method of claim 1, wherein bonding the intermediate electrically conductive bonding layer to the electrically conductive receiving bonding layer comprises maintaining the intermediate electrically conductive bonding layer and the electrically conductive receiving bonding layer at an elevated temperature above a liquidus temperature of the intermediate electrically conductive bonding layer.

18. The method of claim 17, wherein bonding the intermediate electrically conductive bonding layer to the electrically conductive receiving bonding layer comprises transferring heat to the intermediate electrically conductive bonding layer with the transfer head.

19. The method of claim 1, further comprising

heating a plurality of regions of the intermediate electrically conductive bonding layer to the liquidus temperature or higher;

picking up a corresponding plurality of the micro devices and a corresponding plurality of portions of the intermediate electrically conductive bonding layer with a corresponding plurality of transfer heads;

placing the plurality of micro devices and plurality of portions of the intermediate bonding layer on a corresponding plurality of locations of the electrically conductive receiving bonding layer on the receiving substrate; and

bonding the plurality of portions of the intermediate electrically conductive bonding layer to the corresponding plurality of locations of the electrically conductive receiving bonding layer to form a corresponding plurality of permanent alloy bonding layers having a liquidus temperature above 150°

C.