Cleaning process for semiconductor device fabrication

• US 8,518,634 B2
• Filed: 02/08/2011
• Issued: 08/27/2013
• Est. Priority Date: 02/08/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yeh, Ming-Hsi, Lin, Yu-Fu, Ku, Shao-Yen, Yang, Chi-Ming, Lin, Chin-Hsiang
• Primary Examiner(s): Duda, Kathleen
• Application Number:
  US13/022,931
• Publication Number:
  US 20120202156A1
• Time in Patent Office: 931 Days
• Field of Search: 430/311, 430/331
• US Class Current: 430/331
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 21/823814 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 21/823828 with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes

Abstract

A method of making an integrated circuit is provided. The method includes providing a substrate having a photosensitive layer. The photosensitive layer is exposed to a radiation beam. The exposed photosensitive layer is developed in a first chamber. In the first chamber, a cleaning process is performed on the developed photosensitive layer. The cleaning process includes using a rinse solution including at least one of ozone, hydrogen peroxide, and oxalic acid.

Claims

1. A method of making an integrated circuit, the method comprising:

providing a substrate having a photosensitive layer;

exposing the photosensitive layer to a radiation beam;

developing the exposed photosensitive layer, wherein the developing is performed in a first chamber; and

performing a cleaning process on the developed photosensitive layer, wherein the cleaning process is formed in the first chamber, and wherein the cleaning process includes using a rinse solution including at least one of ozone, hydrogen peroxide, and oxalic acid and another acid.

2. The method of claim 1, wherein the rinse solution includes between approximately 1 ppm and approximately 500 ppm of ozone.

3. The method of claim 1, wherein the rinse solution includes between approximately 0.1 weight percent and approximately 10 weight percent of hydrogen peroxide.

4. The method of claim 1, wherein the rinse solution includes between approximately 0.05 weight percent and approximately 10 weight percent of oxalic acid.

5. The method of claim 1, wherein the another acid is selected from the group consisting of HCl, acetic acid, citric acid, and tartaric acid.

6. The method of claim 1, wherein the rinse solution includes between approximately 0.01 weight percent and approximately 10 weight percent of the another acid and the another acid is selected from the group consisting of HCl, acetic acid, citric acid, and tartaric acid.

7. The method of claim 1, wherein the performing the cleaning process includes spraying the rinse solution onto the substrate.

8. The method of claim 1, further comprising:

baking the substrate after performing the cleaning process.

9. The method of claim 1, wherein the developing including providing tetra-methyl ammonium hydroxide (TMAH).

10. A method, the method comprising:

providing a semiconductor substrate;

applying a developer to the semiconductor substrate in a first chamber; and

applying a rinse solution, after applying the developer, to the semiconductor substrate in the first chamber, wherein the rinse solution includes a first component being at least one of ozone, hydrogen peroxide, and oxalic acid;

a second component being another acid; and

de-ionized water.

11. The method of claim 10, wherein the rinse solution includes the first component of ozone.

12. The method of claim 10, wherein the another acid of the rinse solution is selected from the group consisting of HCl, acetic acid, citric acid, and tartaric acid.

13. The method of claim 10, wherein the rinse solution includes the first component of hydrogen peroxide.

14. The method of claim 10,

wherein the first component is hydrogen peroxide;

wherein the rinse solution includes at least approximately 0.1 weight percent (wt %) of the first component; and

wherein the rinse solution includes at least approximately 0.1 weight percent (wt %) of the another acid.

15. A method of semiconductor fabrication, comprising:

providing a substrate having a photosensitive layer;

exposing the photosensitive layer to a radiation beam;

developing the exposed photosensitive layer;

performing a cleaning process on the developed photosensitive layer, wherein the cleaning process includes using a rinse solution including oxalic acid;

performing a hard bake process on the cleaned and developed photosensitive layer to form a masking element in the photosensitive layer; and

using the masking element to pattern an underlying layer.

16. The method of claim 15, further comprising:

a de-ionized water rinse prior to the cleaning process.

17. The method of claim 15, wherein the rinse solution further comprises another acid, wherein the another acid is different from the oxalic acid.

18. The method of claim 15, wherein the cleaning process is performed at a temperature between approximately 10°

C. and approximately 80°

C.