Blended polymer FETs

• US 8,518,738 B2
• Filed: 06/29/2007
• Issued: 08/27/2013
• Est. Priority Date: 06/29/2006
• Status: Active Grant

• Current Assignee: Eidgenoessische Technische Hochschule Zuerich, Technische Universiteit Eindhoven, Cambridge Enterprise Limited (University of Cambridge)
• Original Assignee: Eidgenoessische Technische Hochschule Zurich, Technische Universiteit Eindhoven, Cambridge Enterprise Limited (University of Cambridge)
• Inventors: Sirringhaus, Henning, Goffri, Shalom, Paul Radano, Christopher, Smith, Paul, Muller, Christian, Wolfer, Pascal, Stingelin-Stutzmann, Natalie, A. J. Janssen, Rene
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): THOMAS, TONIAE M
• Application Number:
  US12/306,432
• Publication Number:
  US 20100044684A1
• Time in Patent Office: 2,251 Days
• Field of Search: 438/99, 438/781, 257/E51.024
• US Class Current: 438/99
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/488 the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
• CPC Class Codes: H10K 71/191 characterised by provisions for the orientation or alignment of the layer to be deposited
• CPC Class Codes: H10K 85/10 Organic polymers or oligomers
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: Y02E 10/549 Organic PV cells

Abstract

A method for forming a semiconductor body, the method comprising: forming a mixture of an organic semiconducting material and a binder material; causing the semiconducting material to at least partially solidify; and causing the binder material to crystallize in such a way as to cause the semiconducting material to at least partially segregate from the binder material.

Claims

1. A method for forming a semiconductor body, the method comprising:

forming a mixture of an organic semiconducting material and a binder material;

causing the semiconducting material to at least partially solidify; and

causing the binder material to crystallize in such a way as to cause the semiconducting material to at least partially segregate from the binder material,

wherein the step of causing the semiconducting material to at least partially solidify is performed prior to the step of causing the binder to crystallize.

2. A method as claimed in claim 1, wherein the step of causing the semiconducting material to at least partially solidify comprises causing the semiconducting material to crystallize.

3. A method as claimed in claim 1, wherein the step of causing the binder material to crystallize comprises decreasing the temperature of the mixture.

4. A method as claimed in claim 1, wherein the organic semiconducting material is a semiconducting polymer.

5. A method as claimed in claim 1, wherein the binder material is a semi-crystalline polymer.

6. A method as claimed in claim 5, wherein the organic semiconducting material is a polymer that forms a block copolymer with the polymer binder.

7. A method as claimed in claim 1, wherein the binder material is semiconducting.

8. A method as claimed in claim 1, wherein the mixture comprises a solvent and the method further comprises the step of removing the solvent prior to the step of causing the binder material to crystallize.

9. A method as claimed in claim 1, wherein the step of removing the solvent occurs prior to the step of causing the semiconducting material to solidify.

11. A method as claimed in claim 1, wherein causing the semiconductor material to at least partially segregate from the binder material comprises causing the semiconductor material to become concentrated at the interfaces of the binder material with adjacent media.

10. A method for forming a semiconductor body, the method comprising:

forming a mixture of an organic semiconducting material and a binder material;

causing the semiconducting material to at least partially solidify; and

causing the binder material to crystallize in such a way as to cause the semiconducting material to become concentrated at the interfaces of the binder material with adjacent media.