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Method for manufacturing semiconductor device

  • US 8,518,755 B2
  • Filed: 02/17/2011
  • Issued: 08/27/2013
  • Est. Priority Date: 02/26/2010
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming an oxide semiconductor layer;

    performing addition of oxygen on an entirety of top surface of the oxide semiconductor layer by an ion implantation method or an ion doping method so as to cut a bond between hydrogen and metal contained in the oxide semiconductor layer, a bond between metal and hydroxyl group, or a bond between hydrogen and oxygen in hydroxyl group bonded to metal; and

    performing heat treatment at higher than or equal to 250°

    C. and lower than or equal to 700°

    C. on the oxide semiconductor layer after performing the addition of oxygen.

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