Deposition method and method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor layer;
forming a gate insulating layer comprising gallium oxide on and in contact with the oxide semiconductor layer; and
forming a gate electrode over the gate insulating layer,wherein the gate insulating layer is formed by a sputtering method,wherein the oxide semiconductor layer comprises a material represented by a chemical formula which is InMO3(ZnO)m (m>
0), andwherein M represents one or more metal elements selected from zinc, gallium, aluminum, manganese and cobalt.
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Accused Products
Abstract
An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.
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Citations
22 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer; forming a gate insulating layer comprising gallium oxide on and in contact with the oxide semiconductor layer; and forming a gate electrode over the gate insulating layer, wherein the gate insulating layer is formed by a sputtering method, wherein the oxide semiconductor layer comprises a material represented by a chemical formula which is InMO3(ZnO)m (m>
0), andwherein M represents one or more metal elements selected from zinc, gallium, aluminum, manganese and cobalt. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer; forming an insulating layer comprising gallium on and in contact with the oxide semiconductor layer; and forming an electrode over the insulating layer, wherein the insulating layer is formed by a sputtering method, wherein the oxide semiconductor layer comprises a material represented by a chemical formula which is InMO3(ZnO)m (m>
0), andwherein M represents one or more metal elements selected from zinc, gallium, aluminum, manganese and cobalt. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer; forming an insulating layer comprising gallium on and in contact with the oxide semiconductor layer; and forming an electrode over the insulating layer, wherein the insulating layer is formed by a sputtering method, and wherein an oxide target used for the sputtering method comprises a material represented by a chemical formula which is GaOX, wherein X is less than 1.5. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification