Miniaturized, low power FGMOSFET radiation sensor and wireless dosimeter system

• US 8,519,345 B2
• Filed: 10/16/2009
• Issued: 08/27/2013
• Est. Priority Date: 10/16/2008
• Status: Active Grant

• Current Assignee: King Abdullah University of Science and Technology
• Original Assignee: King Abdullah University of Science and Technology
• Inventors: Arsalan, Muhammad, Shamim, Atif, Tarr, Nicholas Garry, Roy, Langis
• Primary Examiner(s): Porta, David
• Assistant Examiner(s): LEE, SHUN K
• Application Number:
  US12/580,670
• Publication Number:
  US 20100096556A1
• Time in Patent Office: 1,411 Days
• Field of Search: 250/370.07
• US Class Current: 250/370.07
• CPC Class Codes: G01T 1/026 Semiconductor dose-rate meters
• CPC Class Codes: H01L 27/14659 Direct radiation imagers structures

Abstract

A miniaturized floating gate (FG) MOSFET radiation sensor system is disclosed, The sensor preferably comprises a matched pair of sensor and reference FGMOSFETs wherein the sensor FGMOSFET has a larger area floating gate with an extension over a field oxide layer, for accumulation of charge and increased sensitivity. Elimination of a conventional control gate and injector gate reduces capacitance, and increases sensitivity, and allows for fabrication using standard low cost CMOS technology. A sensor system may be provided with integrated signal processing electronics, for monitoring a change in differential channel current I_D, indicative of radiation dose, and an integrated negative bias generator for automatic pre-charging from a low voltage power source. Optionally, the system may be coupled to a wireless transmitter. A compact wireless sensor System on Package solution is presented, suitable for dosimetry for radiotherapy or other biomedical applications.

Claims

1. A radiation sensor comprising:

a substrate comprising a device well;

a first source and a first drain, separated by a channel region, defined in the device well;

a floating gate extending over the channel region and separated therefrom by a gate dielectric layer, and an extension of the floating gate extending over a field dielectric layer adjacent the device well;

a charge injector defined in the substrate, underlying a portion of the floating gate, and separated from the floating gate by the gate dielectric layer, a charge injector source and a charge injector drain being coupled together; and

a shield dielectric layer and an electrostatic shielding layer extending over the floating gate.

2. A radiation sensor according to claim 1 wherein the first source, the first drain, and the floating gate comprise a sensor transistor, and the radiation sensor further comprises signal processing circuitry coupled to the sensor transistor that detects a change in an operating parameter of the sensor transistor indicative of radiation dose.

3. A radiation sensor according to claim 2 wherein the signal processing circuitry comprises circuitry that applies a bias to the sensor transistor and monitors a drain current of the sensor transistor.

4. A radiation sensor comprising:

a matched field effect transistor pair comprising a sensor transistor and a reference transistor on a common substrate,

each of the sensor and reference transistors comprising a device well region of the substrate having defined therein a source and a drain separated by a channel region, a gate oxide overlying the channel region and a floating gate formed thereon, and the sensor transistor further comprising an extension of the floating gate extending over an adjacent field dielectric region;

a respective charge injector associated with each floating gate and separated therefrom by a gate dielectric layer, a source and a drain of each charge injector being coupled together; and

a shield dielectric layer and a shielding layer overlying the floating gates.

5. A radiation sensor according to claim 4 wherein the respective channel widths and channel lengths of the sensor and the reference transistors are substantially identical.

6. A radiation sensor according to claim 4 wherein the charge injector of the sensor transistor is provided in the substrate laterally spaced from the device well of the sensor transistor, and the charge injector of the reference transistor is provided in the substrate laterally spaced from the device well of the reference transistor.

7. A radiation sensor according to claim 6 wherein:

each of the charge injectors comprises a second device well and a source and a drain separated by a channel region formed in the second device well;

the source and drain of each of the charge injectors is connected for coupling to a charging source;

a part of the floating gate of the sensor transistor extends over the channel region of the charge injector of the sensor transistor;

a part of the floating gate of the reference transistor extends over the channel region of the charge injector of the reference transistor; and

each of the charge injectors is separated from the part of the floating gate by the gate dielectric layer, for charging of the floating gate by drain tunneling through the gate dielectric layer.

8. A radiation sensor according to claim 7 wherein the sensor and reference transistors comprise p-channel devices defined in n-doped device wells and each of the charge injectors comprises a p-channel device defined in a p-doped device well.

9. A radiation sensor according to claim 4 wherein the shield dielectric layer comprises an intermetal dielectric comprising borophosphosilicate glass and the shielding layer comprises metal of a multilayer metal CMOS process.

10. A radiation sensor according to claim 4 wherein the sensor and reference transistors are interdigitated.

11. A radiation sensor according to claim 4 further comprising another matched field effect transistor pair, wherein respective field effect transistor pairs are connected in parallel.

12. A radiation sensor according to claim 4 further comprising signal processing circuitry that detects a change in an operating parameter indicative of radiation dose.

13. A radiation sensor according to claim 4 further comprising signal processing circuitry that applies a bias to and monitors a differential drain current of the sensor and reference transistors.

14. A sensor system-on-package assembly comprising

a package comprising first and second integrated circuits, the first integrated circuit comprising a radiation sensor according to claim 4, monolithically integrated with signal processing electronics (SPE) comprising a current to voltage converter and differential amplifier that monitors a differential change in drain current of the sensor and generates an output signal, and the second integrated circuit comprising an RF transmitter;

a low voltage power source coupled to and powering the first and second integrated circuits;

an antenna coupled to the RF transmitter; and

an interconnect coupling an output of the SPE to an input of the RF transmitter.

15. A radiation sensor comprising

a matched field effect transistor pair comprising a sensor transistor and a reference transistor on a common substrate,

each of the sensor and reference transistors comprising a device well region of the substrate having defined therein a source and a drain separated by a channel region, a gate oxide overlying the channel region and a floating gate formed thereon, and the sensor transistor further comprising an extension of the floating gate extending over an adjacent field dielectric region;

a respective charge injector associated with each floating gate and separated therefrom by a gate dielectric layer;

a shield dielectric layer and a shielding layer overlying the floating gates; and

signal processing circuitry that detects a change in an operating parameter indicative of radiation dose, wherein

the signal processing circuitry comprises circuitry that applies a bias to and monitors a differential drain current of the sensor and reference transistors.

16. A radiation sensor according to claim 15 wherein the signal processing circuitry comprises a current-to-voltage converter and a differential amplifier coupled to the differential drain current of the sensor and reference transistors and that generates an output voltage indicative of radiation dose.

17. A radiation sensor according to claim 16 wherein the matched field effect transistor pair and the signal processing circuitry are monolithically integrated on the common substrate.

18. A radiation sensor according to claim 17 further comprising integrated pre-charging circuitry that is coupled to and pre-charges the floating gates.

19. A radiation sensor according to claim 18 further comprising a low voltage power source coupled to the sensor transistor, wherein the pre-charging circuitry comprises a negative bias generator charge pump.

20. A radiation sensor according to claim 16 further comprising a wireless transmitter coupled to an output of the signal processing circuitry.

21. A sensor according to claim 20 wherein the transmitter is operable for transmitting at a frequency in the 5 GHz U-NII band.