Light emitting diode components integrated with thermoelectric devices

• US 8,519,409 B2
• Filed: 11/15/2010
• Issued: 08/27/2013
• Est. Priority Date: 11/15/2010
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Yu, Chih-Kuang, Hsia, Hsing-Kuo
• Primary Examiner(s): Lee, Jae
• Application Number:
  US12/946,453
• Publication Number:
  US 20120119246A1
• Time in Patent Office: 1,016 Days
• Field of Search: 257/77, 257/E23.082, 257/930, 257/717, 257/719, 257/712, 257/720
• US Class Current: 257/77
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2933/0075 relating to heat extraction or cooling elements
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/645 the elements being electrically controlled, e.g. Peltier elements

Abstract

The present disclosure relates to structures of LED components that integrate thermoelectric devices with LEDs on LED emitter substrates for cooling the LEDs. The present disclosure also related to methods for integrating LED dies with thermoelectric elements. The LED component includes an LED emitter substrate with a cavity in a downward facing surface of the LED emitter substrate and thermal vias that extend from a bottom of the cavity to an area close to an upward facing surface of the LED emitter substrate. The device also includes thermoelectric elements disposed in the cavity where the thermoelectric elements connect with their corresponding thermal vias. The device further includes a thermoelectric substrate in the cavity to electrically connect to the thermoelectric elements. The device further includes an LED die on the upward facing surface of the LED emitter substrate such that the LED die is opposite the cavity.

Claims

1. A light emitting diode (LED) component comprising:

an LED emitter substrate having an upward facing surface and a downward facing surface, the LED emitter substrate including a cavity in the downward facing surface of the LED emitter substrate and a plurality of thermal vias extending from a bottom of the cavity to an area close to the upward facing surface of the LED emitter substrate;

a plurality of thermoelectric elements disposed in the cavity, wherein each of the plurality of thermoelectric elements is connected to a corresponding one of the plurality of thermal vias;

a thermoelectric substrate disposed in the cavity, wherein the thermoelectric substrate is disposed with a plurality of electrical vias and bonding pads to electrically connect the plurality of thermoelectric elements; and

an LED die disposed on the upward facing surface of the LED emitter substrate, wherein the LED die includes a plurality of doped layers.

2. The LED component of claim 1, wherein the LED emitter substrate further comprises an isolation layer disposed on the upward facing surface of the LED emitter substrate and wherein the plurality of thermal vias extend from the bottom of the cavity to the isolation layer.

3. The LED component of claim 1, wherein the LED emitter substrate further comprises a metallic interconnect disposed to connect a first thermal via to an adjacent second thermal via.

4. The LED component of claim 1, wherein the plurality of thermoelectric elements comprises an alternating arrangement of p-type semiconductor thermoelectric elements and n-type semiconductor thermoelectric elements so that the number of p-type semiconductor thermoelectric elements is the same as the number of n-type semiconductor thermoelectric elements.

5. The LED component of claim 4, wherein one of the p-type semiconductor thermoelectric elements is connected to an adjacent one of the n-type semiconductor thermoelectric elements through their corresponding thermal vias and a metallic interconnect disposed in the LED emitter substrate to connect the corresponding thermal vias.

6. The LED component of claim 5, wherein the plurality of electrical vas and bonding pads of the thermoelectric substrate in conjunction with the thermal vias and one or more of the metallic interconnect of the LED emitter substrate are disposed to electrically connect in series the alternating arrangement of p-type semiconductor thermoelectric elements and n-type semiconductor thermoelectric elements.

7. The LED component of claim 5, wherein if one of the p-type semiconductor thermoelectric elements is adjacent to two of the n-type semiconductor thermoelectric elements, then the p-type semiconductor thermoelectric element is connected to a first adjacent n-type semiconductor thermoelectric element through their corresponding thermal vias and the metallic interconnect between the thermal vias in the LED emitter substrate, and the p-type semiconductor thermoelectric element is connected to a second adjacent n-type semiconductor thermoelectric element through one of the bonding pads of the thermoelectric substrate.

8. The LED component of claim 4, wherein the thermoelectric substrate further comprises one or more thermoelectric interconnects to connect one of the p-type semiconductor thermoelectric elements to an adjacent one of the n-type semiconductor thermoelectric elements.

9. The LED component of claim 8, wherein the thermoelectric substrate further comprises one or more thermal vias connected to a corresponding one of the metallic interconnects to channel heart away from the plurality of thermoelectric elements toward a downward facing surface of the thermoelectric substrate.

10. The LED component of claim 1, wherein the thermoelectric substrate further comprises:

a first one of the plurality of electrical vias disposed to extend through the thermoelectric substrate to connect an outermost one of the p-type semiconductor thermoelectric elements to a first electrode; and

;

a second one of the electrical vias disposed to extend through the thermoelectric substrate to connect an outermost one of the n-type semiconductor thermoelectric elements to a second electrode.

11. The LED component of claim 1, further comprising a bonding pad disposed on the upward facing surface of the LED emitter substrate opposite the cavity to bond the LED die to the LED emitter substrate.

12. The LED component of claim 11, where in the bonding pad electrically connects power to one of the doped layers of the LED die.

13. The LED component of claim 11, wherein the bonding pad further comprises a reflective layer to reflect light emitted from the LED die upward.

14. The LED component of claim 1, further comprising a contact disposed on the upward facing surface of the LED emitter substrate to connect power to one of the doped layers of the LED die.

15. A light emitting diode (LED) component having a downward facing surface and an upward facing surface, the LED component comprising:

a cavity in the downward facing surface of the LED component and a plurality of thermal vias extending from a bottom of the cavity to an area close to the upward facing surface of the LED component;

an LED die disposed on the upward facing surface of the LED component; and

a plurality of thermoelectric elements disposed in the cavity to connect with the plurality of thermal vias, wherein a direction of flow of charge carriers of the plurality of thermoelectric elements is away from the LED die to remove heat from the LED die.

16. The LED component of claim 15, wherein the plurality of thermoelectric elements comprises an alternating arrangement of p-type semiconductor thermoelectric elements and n-type semiconductor thermoelectric elements so that the number of p-type semiconductor thermoelectric elements is the same as the number of n-type semiconductor thermoelectric elements.

17. The LED component of claim 16, wherein the alternating arrangement of p-type semiconductor thermoelectric elements and n-type semiconductor thermoelectric elements are electrically connected in series.

18. The LED component of claim 17, wherein an end of each of the plurality of thermoelectric elements closer to the LED die is the cold end, and wherein the cold end of one of the n-type semiconductor thermoelectric elements is connected to the cold end of an adjacent one of the p-type semiconductor thermoelectric elements.

19. The LED component of claim 17, wherein an end of each of the plurality of thermoelectric elements farther from the LED die is the hot end, and wherein the hot end of one of the p-type semiconductor thermoelectric elements is connected to the hot end of an adjacent one of the n-type semiconductor thermoelectric elements.

20. A light emitting diode (LED) component, comprising:

an LED emitter substrate of a first semiconductor material, the LED emitter substrate having a downward facing surface and an upward facing surface;

a cavity disposed in the downward facing surface of the LED emitter substrate;

a plurality of first vias disposed in the LED emitter substrate, the first vias extending from a bottom of the cavity to an area close to the upward facing surface of the LED emitter substrate;

a thermoelectric substrate of a second semiconductor material, the thermoelectric substrate having a plurality of second vias, wherein the thermoelectric substrate is bonded to the LED emitter through the first vias and second vias; and

an LED die bonded to the upward facing surface of the LED emitter substrate opposite the cavity.