Optoelectronic device and method for manufacturing the same
First Claim
Patent Images
1. An optoelectronic device comprising:
- a substrate; and
a first transition stack formed on the substrate comprising at least a first transition layer formed on the substrate having at least a hollow component formed inside the first transition layer, and a second transition layer formed on the first transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer.
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Abstract
An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.
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Citations
20 Claims
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1. An optoelectronic device comprising:
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a substrate; and a first transition stack formed on the substrate comprising at least a first transition layer formed on the substrate having at least a hollow component formed inside the first transition layer, and a second transition layer formed on the first transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of fabricating an optoelectronic device, comprising:
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providing a substrate; forming a first transition layer on the substrate; forming at least a hollow component inside the first transition layer; and forming a second transition layer on the on the first transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification