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Polarization doping in nitride based diodes

  • US 8,519,437 B2
  • Filed: 09/14/2007
  • Issued: 08/27/2013
  • Est. Priority Date: 09/14/2007
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • an n-type semiconductor layer;

    a p-type semiconductor layer;

    an active region interposed between said n-type layer and said p-type layer; and

    a three-dimensional polarization-graded (3DPG) structure disposed on said n-type layer opposite said active region, said 3DPG structure comprising at least one repeatable stack unit, said 3DPG structure having a wurtzite crystal structure grown along the [0001]-crystal direction;

    wherein said repeatable stack unit comprises;

    a retrograded layer that is compositionally retrograded from a first material to a second material over a grading distance, said retrograded layer disposed proximate to said n-type layer such that said second material is closest to said n-type layer; and

    a silicon (Si) delta-doped layer disposed adjacent to said retrograded layer opposite said n-type layer.

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