Thin-film transistor based piezoelectric strain sensor and method
First Claim
1. A strain sensor, comprising:
- a flexible substrate;
a thin-film transistor structure comprising at least one piezoelectric material layer formed below a semiconductor layer and deposited on said flexible substrate, wherein said at least one piezoelectric material layer generates an electric charge resulting in a modulation of a transistor current;
a metal gate layer located on said flexible substrate with respect to a source region and a drain region, wherein said at least one piezoelectric material layer of said thin-film transistor structure provides for an increased sensitivity and enhanced device control with respect to said strain sensor; and
wherein said thin-film transistor structure comprises a dual gate field effect sensor having said semiconductor layer sandwiched above said at least one piezoelectric material layer and below a second piezoelectric layer included in a structure of said dual gate field effect sensor wherein at least one channel region of said semiconductor layer is modulated by strain in said at least one piezoelectric material layer and said second piezoelectric layer.
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Abstract
A piezoelectric strain sensor and method thereof for detecting strain, vibration, and/or pressure. The sensor incorporates a sequence of piezoelectric and semiconductor layers in a thin-film transistor structure. The thin-film transistor structure can be configured on a flexible substrate via a low-cost fabrication technique. The piezoelectric layer generates an electric charge resulting in a modulation of a transistor current, which is a measure of external strain. The sensor can be formed as a single gate field-effect piezoelectric sensor and a dual gate field-effect piezoelectric sensor. The semiconductor layer can be configured from a nanowire array resulting in a metal-piezoelectric-nanowire field effect transistor. The single and dual gate field-effect piezoelectric sensor offer increased sensitivity and device control due to the presence of the piezoelectric layer in the transistor structure and low cost manufacturability on large area flexible substrates.
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Citations
14 Claims
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1. A strain sensor, comprising:
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a flexible substrate; a thin-film transistor structure comprising at least one piezoelectric material layer formed below a semiconductor layer and deposited on said flexible substrate, wherein said at least one piezoelectric material layer generates an electric charge resulting in a modulation of a transistor current; a metal gate layer located on said flexible substrate with respect to a source region and a drain region, wherein said at least one piezoelectric material layer of said thin-film transistor structure provides for an increased sensitivity and enhanced device control with respect to said strain sensor; and wherein said thin-film transistor structure comprises a dual gate field effect sensor having said semiconductor layer sandwiched above said at least one piezoelectric material layer and below a second piezoelectric layer included in a structure of said dual gate field effect sensor wherein at least one channel region of said semiconductor layer is modulated by strain in said at least one piezoelectric material layer and said second piezoelectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A strain sensor, comprising:
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a rigid substrate; a nanowire/nanotube transistor structure comprising at least one piezoelectric material layer formed below a semiconductor carbon nanotube array and deposited on said substrate, wherein said piezoelectric layer generates an electric charge resulting in a modulation of a transistor current; a metal gate layer located between a source region and a drain region, wherein said piezoelectric layer in said carbon nanotube transistor structure provides for an increased sensitivity and enhanced device control with respect to said strain sensor; and wherein said nanowire/nanotube transistor structure comprises a dual gate field effect sensor having said semiconductor layer sandwiched above said at least one piezoelectric material layer and below a second piezoelectric layer included in said dual gate field effect sensor wherein at least one channel region of said semiconductor layer is modulated by strain in said at least one piezoelectric material layer and said second piezoelectric layer.
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Specification