Semiconductor constructions containing tubular capacitor storage nodes, and retaining structures along portions of the tubular capacitor storage nodes

• US 8,519,463 B2
• Filed: 03/06/2012
• Issued: 08/27/2013
• Est. Priority Date: 08/30/2005
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Manning, H. Montgomery, Graettinger, Thomas M.
• Primary Examiner(s): STARK, JARRETT J
• Application Number:
  US13/413,552
• Publication Number:
  US 20120168903A1
• Time in Patent Office: 539 Days
• Field of Search: 257/296, 257/304, 257/E27.048, 257/E21.019, 257/E27.014, 438/386
• US Class Current: 257/304
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H01L 29/945 Trench capacitors
• CPC Class Codes: H10B 12/033 the capacitor extending over the transistor
• CPC Class Codes: H10B 12/09 with simultaneous manufacture of the peripheral circuit region and memory cells
• CPC Class Codes: H10B 12/318 the storage electrode having multiple segments
• CPC Class Codes: Y10S 257/906 Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate

Abstract

The invention includes semiconductor constructions, and also includes methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive storage node material within openings in an insulative material to form conductive containers. A retaining structure lattice is formed in physical contact with at least some of the containers, and subsequently the insulative material is removed to expose outer surfaces of the containers. The retaining structure can alleviate toppling or other loss of structural integrity of the container structures. The electrically conductive containers correspond to first capacitor electrodes. After the outer sidewalls of the containers are exposed, dielectric material is formed within the containers and along the exposed outer sidewalls. Subsequently, a second capacitor electrode is formed over the dielectric material. The first and second capacitor electrodes, together with the dielectric material, form a plurality of capacitor devices.

Claims

1. A semiconductor construction, comprising:

a semiconductor substrate;

a capacitor storage node supported by the substrate, the storage node having a first end proximate the substrate and a second end in opposing relation to the first end;

the second end having an upper portion, a lower portion below the upper portion, and a step connecting the upper and lower portions to one another;

a retaining structure against the upper portion of the second end and not against the lower portion of the second end;

a dielectric material along the storage node;

an electrically conductive material over the dielectric material and capacitively connected with the storage node; and

wherein;

the second end of the storage node is round;

the upper portion of the second end comprises half of the round second end; and

the lower portion of the second end comprises an opposing half of the round second end relative to the upper portion.

2. The construction of claim 1 wherein the substrate has an uppermost surface, the retaining structure has a lowermost surface, and the lowermost surface of the retaining structure is spaced from the uppermost surface of the substrate by at least about 5,000 Å

.

3. The construction of claim 2 further comprising an electrically insulative material over the substrate and around a lower region of the storage node;

and wherein said electrically insulative material comprises an uppermost surface that is spaced from the lowermost surface of the retaining structure by at least about 5,000 Å

.

4. The construction of claim 3 wherein the electrically insulative material consists essentially of one or both of undoped silicate glass and silicon nitride.

5. The construction of claim 1 wherein the storage node comprises titanium nitride.

6. The construction of claim 1 wherein the storage node comprises a layer of titanium nitride and a layer of titanium.

7. The construction of claim 1 wherein the retaining structure comprises silicon nitride.

8. The construction of claim 1 wherein the electrically conductive material is directly over both of the upper and lower portions of the second end.

9. The construction of claim 1 wherein the electrically conductive material is directly over the lower portion of the second end, and is not directly over the upper portion of the second end.

10. The construction of claim 1 wherein:

the capacitor storage node is shaped as a hollow tube;

said tube having an inner surface along its interior and an outer surface along its exterior;

the dielectric material is along the inner and outer surfaces of the tube; and

the electrically conductive material is within the tube as well as around the outer surfaces of the tube.

11. The construction of claim 10 wherein the electrically conductive material is directly over both of the upper and lower portions of the second end.

12. The construction of claim 10 wherein the electrically conductive material is directly over the lower portion of the second end, and is not directly over the upper portion of the second end.

13. An electronic system, comprising:

a processor;

a memory device in data communication with the processor; and

wherein at least one of the processor and the memory device comprises a plurality of capacitors, the capacitors being in an assembly comprising;

capacitor storage nodes shaped as hollow tubes extending upwardly from a substrate, the tubes having first ends proximate the substrate and second ends in opposing relation to the first ends;

the second ends having upper portions, lower portions below the upper portions, and steps connecting the upper and lower portions to one another;

the tubes having inner surfaces along their interiors and outer surfaces along their exteriors;

the tubes extending in an array comprising rows and columns;

retaining structures against the upper portions of the second ends and not against the lower portion of the second ends;

the retaining structures extending between and connecting alternating pairs along the rows of storage nodes of the array;

a dielectric material along the inner and outer surfaces of the tubes; and

an electrically conductive material over the dielectric material and capacitively connected with the storage nodes.

14. The electronic system of claim 13 wherein:

the second ends of the storage nodes have round peripheries;

the upper portions of the second ends comprise about one-half of the round peripheries of the second ends; and

the lower portions of the second end comprise about one-half of the round peripheries of the second ends.

15. The electronic system of claim 13 wherein the storage nodes comprise titanium nitride.

16. The electronic system of claim 13 wherein the retaining structures comprise silicon nitride.

17. The electronic system of claim 13 wherein the electrically conductive material is directly over both of the upper and lower portions of the second ends.

18. The electronic system of claim 13 wherein the electrically conductive material is directly over the lower portions of the second ends, and is not directly over the upper portions of the second ends.

19. A semiconductor construction, comprising:

a semiconductor substrate;

a capacitor storage node supported by the substrate, the storage node being shaped as a hollow tube extending upwardly from the substrate, the tube having a first end proximate the substrate and a second end in opposing relation to the first end;

the second end having an upper portion, a lower portion below the upper portion, and a step connecting the upper and lower portions to one another;

the tube having an inner surface along an interior and an outer surface along an exterior;

a retaining structure against the upper portion of the second end and not against the lower portion of the second end;

a dielectric material along the inner and outer surfaces of the tube, the dielectric material being in physical contact with the inner and outer surfaces of the upper and lower portions of the second end;

an electrically conductive material along the inner and outer surfaces of the tube and over the dielectric material and in direct physical contact with the dielectric material and capacitively connected with the storage node, the electrically conductive material being capacitively connected with both the inner and outer surfaces of the upper and lower portions of the second end;

wherein,

the second end of the storage node has a round periphery;

the upper portion of the second end comprises half of the round periphery of the second end; and

the lower portion of the second end comprises an opposing half of the round periphery of the second end relative to the upper portion of the second end.

20. An electronic system comprising the semiconductor construction of claim 19.