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Semiconductor device

  • US 8,519,487 B2
  • Filed: 03/21/2011
  • Issued: 08/27/2013
  • Est. Priority Date: 03/21/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    a gate structure disposed on the substrate, wherein the gate structure comprises a high-k dielectric layer, wherein the high-k dielectric layer is U-shaped;

    a first seal layer disposed on a sidewall of the gate structure, wherein the first seal layer is an oxygen-free seal layer and a first spacer, and is non-L-shaped; and

    a second seal layer disposed on a sidewall of the first spacer, wherein the second seal layer comprises a material different from the first seal layer, and the second seal layer comprises an L-shaped seal layer.

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