Backside stimulated sensor with background current manipulation

• US 8,519,490 B2
• Filed: 08/09/2010
• Issued: 08/27/2013
• Est. Priority Date: 08/09/2010
• Status: Active Grant

• Current Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Original Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Inventors: Bikumandla, Manoj
• Primary Examiner(s): Vu, David
• Assistant Examiner(s): TAYLOR, EARL N
• Application Number:
  US12/853,160
• Publication Number:
  US 20120032235A1
• Time in Patent Office: 1,114 Days
• Field of Search: 257/253, 257/44, 257/446, 257/460, 257/461, 205/787.5, 205/789
• US Class Current: 257/414
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82
• CPC Class Codes: H01L 27/00 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate details thereof H01L23/00, H01L29/00 - H10K10/00; assemblies consisting of a plurality of individual solid state devices H01L25/00

Abstract

A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

Claims

1. A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus, comprising:

a substrate including a backside;

a source coupled with the substrate to generate a background current; and

a detection element electrically coupled with the substrate to measure the background current;

at least one receptor entity having an electrical charge and that is coupled with the backside, wherein the at least one receptor entity is operable to bind to an analyte that is to be exposed to the backside, and wherein the binding of the at least one receptor entity to the analyte is to provide a non-light-emitting stimulus to alter the electrical charge of the at least one receptor entity and is to affect a measurable change in the background current.

2. The CMOS pixel of claim 1, wherein the at least one receptor entity comprises at least one layer of bio-probe or bio-probes substantially coupled with the backside.

3. The CMOS pixel of claim 2, wherein the bio-probe or bio-probes have a capacity of affinity based binding with the analyte;

and

wherein the affinity based binding affects the background current.

4. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes include at least one positively charged entity.

5. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes include at least one negatively charged entity.

6. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes include at least one probe DNA that affinitively binds to a target DNA.

7. The CMOS pixel of claim 6, wherein the target DNA is attached to a label.

8. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes comprises at least one of heparin and protamine.

9. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes comprises at least one of an antibody and an antigen.

10. The CMOS pixel of claim 3, wherein the bio-probe or bio-probes include at least one enzyme.

11. The CMOS pixel of claim 2, wherein the bio-probe or bio-probes include at least one selected from a cell and a tissue.

12. The CMOS pixel of claim 1, wherein the source to generate the background current includes a diode that is substantially disposed within the substrate.

13. The CMOS pixel of claim 12, wherein the diode includes more angles than a cuboid or fewer angles than a cuboid.

14. The CMOS pixel of claim 1, wherein the source to generate the background current includes a shallow trench isolation structure that is substantially disposed within the substrate, and wherein:

(1) the shallow trench isolation structure includes at least one rough surface;

or (2) the substrate includes a portion adjacent to the shallow trench isolation structure that includes embedded dopant atoms.

15. The CMOS pixel of claim 14, wherein the embedded dopant atoms include boron ions.

16. The CMOS pixel of claim 1, further including at least one cantilever;

wherein the at least one cantilever substantially interacts with the backside, and

wherein the at least one cantilever includes the at least one receptor entity which includes a layer of bio-probe or bio-probes coupled with a surface of the at least one cantilever.

17. The CMOS pixel of claim 16, wherein the at least one cantilever is coupled with the backside through an intermediary member.