Semiconductor device having multiple substrates

• US 8,519,493 B2
• Filed: 11/12/2008
• Issued: 08/27/2013
• Est. Priority Date: 03/27/2003
• Status: Expired due to Fees

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Fujii, Tetsuo
• Primary Examiner(s): Dickey, Thomas L
• Application Number:
  US12/292,068
• Publication Number:
  US 20090079017A1
• Time in Patent Office: 1,749 Days
• Field of Search: 257/415, 257/417, 257/685, 257/686, 257/777, 257/778, 734/93, 735/140.1
• US Class Current: 257/417
• CPC Class Codes: B81B 2207/012 the micromechanical device and the control or processing electronics being separate parts in the same package
• CPC Class Codes: B81B 7/0058 for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

A semiconductor device includes a physical quantity sensor with a movable electrode disposed in a third layer of a first substrate, a fixed electrode in the third layer and a loop layer. The movable electrode and the fixed electrode are insulated by a second layer of the first substrate, and a loop bump disposed between the first substrate and a second substrate and surrounding the movable portion. The loop layer in the third layer is coupled with the second substrate via the loop bump.

Claims

1. A semiconductor device comprising:

a first substrate including first, second and third layers, which are stacked in this order;

a second substrate; and

a loop bump,

wherein the first layer is made of silicon, the second layer is made of an insulation material, and the third layer is made of silicon,

wherein the first substrate provides a physical quantity sensor,

wherein the second substrate provides an electric device,

wherein the physical quantity sensor includes a movable electrode, a fixed electrode and a loop layer, which are disposed in the third layer,

wherein the movable electrode and the fixed electrode are insulated by the second layer,

wherein the physical quantity sensor detects a physical quantity based on a capacitance between the movable electrode and the fixed electrode,

wherein the loop layer in the third layer is coupled with the second substrate via the loop bump,

wherein the loop bump is disposed between the first and second substrates, and surrounds the movable portion,

wherein the second substrate includes an inner pad, an outer pad and a wire layer,

wherein the inner pad is disposed inside of the loop bump, and the outer pad is disposed outside of the loop bump,

wherein the inner pad is electrically coupled with the outer pad through the wire layer, and

wherein the wire layer is electrically insulated from the loop bump.

2. The device according to claim 1,

wherein the wire layer is insulated from the loop bump with an insulation film.

3. The device according to claim 1, wherein the wire layer is made of aluminum.

4. The device according to claim 1,

wherein the second substrate includes fourth to sixth layers, which are stacked in this order,

wherein the fourth layer is made of silicon, the fifth layer is made of an insulation material, and the sixth layer is made of silicon,

wherein the electric device is disposed in the sixth layer of the second substrate,

wherein the third layer of the first substrate faces the sixth layer of the second substrate, and

wherein the fourth and sixth layers are electrically isolated with the fifth layer.

5. The device according to claim 4,

wherein the movable portion is movable in accordance with the physical quantity applied to the device so that the physical quantity sensor outputs the signal corresponding to a displacement of the movable portion, and

wherein the electric device electrically connects to the physical quantity sensor.

6. The device according to claim 5,

wherein the second substrate includes a bump disposed on the sixth layer,

wherein the second substrate is electrically connected to the first substrate through the bump, and

wherein the fourth layer of the second substrate and the first layer of the first substrate are disposed outside.

7. The device according to claim 6,

wherein the electric device controls the physical quantity sensor, and the physical quantity sensor outputs the signal to the electric device through the bump.

8. The device according to claim 7,

wherein the physical quantity sensor is an acceleration sensor, an angular rate sensor or a pressure sensor, and

wherein the electric device is a signal processor.

9. The device according to claim 1,

wherein the movable portion is sandwiched by the first and second substrates,

wherein the sixth layer of the second substrate includes a second loop layer, which surrounds the movable portion,

wherein the loop layer in the first substrate surrounds the movable portion, and

wherein the loop layer in the first substrate is electrically connected to the sixth layer of the second substrate with the loop bump so that the movable portion is shielded.

10. The device according to claim 9,

wherein the first substrate further includes a first poly crystalline silicon layer, which is sandwiched between the first and second layers,

wherein the second substrate further includes a second poly crystalline silicon layer, which is sandwiched between the fourth and fifth layers,

wherein the loop layer of the first substrate is isolated from the third layer with a first loop insulation portion,

wherein the second loop layer of the second substrate is isolated from the sixth layer with a second loop insulation portion,

wherein the second loop layer of the second substrate is electrically coupled with the second poly crystalline silicon layer, and the loop layer of the first substrate is electrically coupled with the first poly crystalline silicon layer, and

wherein the second loop layer of the second substrate is electrically coupled with the loop layer of the first substrate with the loop bump.