3D semiconductor package interposer with die cavity
First Claim
1. A semiconductor device comprising:
- a first die;
a second die;
an interposer, the first die being electrically coupled to a first side of the interposer, the second die being electrically coupled to a second side of the interposer; and
a first substrate, the first substrate being electrically coupled at a first side to the second side of the interposer, wherein the substrate includes a cavity extending from the first side partially through the substrate, the second die being positioned within the cavity, and the substrate having at least one through via extending from a first side of the substrate to a second side of the substrate, the substrate configured to be mounted to a second substrate and electrically connecting the at least one via to the second substrate.
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Accused Products
Abstract
A 3D semiconductor package using an interposer is provided. In an embodiment, an interposer is provided having a first die electrically coupled to a first side of the interposer and a second die electrically coupled to a second side of the interposer. The interposer is electrically coupled to an underlying substrate, such as a packaging substrate, a high-density interconnect, a printed circuit board, or the like. The substrate has a cavity such that the second die is positioned within the cavity. The use of a cavity may allow smaller conductive bumps to be used, thereby allowing a higher number of conductive bumps to be used. A heat sink may be placed within the cavity to aid in the dissipation of the heat from the second die.
148 Citations
19 Claims
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1. A semiconductor device comprising:
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a first die; a second die; an interposer, the first die being electrically coupled to a first side of the interposer, the second die being electrically coupled to a second side of the interposer; and a first substrate, the first substrate being electrically coupled at a first side to the second side of the interposer, wherein the substrate includes a cavity extending from the first side partially through the substrate, the second die being positioned within the cavity, and the substrate having at least one through via extending from a first side of the substrate to a second side of the substrate, the substrate configured to be mounted to a second substrate and electrically connecting the at least one via to the second substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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an interposer having bond pads on a first side and a second side; a first die attached to the bond pads on the first side of the interposer by a first plurality of conductive bumps; a second die attached to the bond pads on the second side of the interposer by a second plurality of conductive bumps; and a substrate, the substrate being attached at a first side to the bond pads on the second side of the interposer by a third plurality of conductive bumps, the substrate having a cavity extending from the first side partially through the substrate, the second die being positioned within the cavity, wherein a second side of the substrate is planar. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A semiconductor device comprising:
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a first die; a second die; an interposer, the first die being electrically coupled to a first side of the interposer, the second die being electrically coupled to a second side of the interposer; a substrate, the substrate being electrically coupled to the second side of the interposer, wherein the substrate includes a cavity extending from a first side of the substrate into the substrate, the second die being positioned within the cavity; and a heat conductive layer disposed within the cavity and extending from the cavity to a second side of the substrate, a first side of the heat conductive layer substantially level with the second side of the substrate, the second die disposed between the heat conductive layer and the interposer. - View Dependent Claims (17, 18, 19)
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Specification