Please download the dossier by clicking on the dossier button x
×

Laser etch via formation

  • US 8,519,538 B2
  • Filed: 04/28/2010
  • Issued: 08/27/2013
  • Est. Priority Date: 04/28/2010
  • Status: Active Grant
First Claim
Patent Images

1. A method of fabricating a semiconductor device, the method comprising:

  • providing a substrate having a frontside and a backside;

    providing a layer above the frontside of the substrate, the layer having a different composition from the substrate and containing a first electrical element;

    controlling a laser power and a laser pulse number to laser etch an opening through the layer and at least a portion of the frontside of the substrate;

    completely filling the opening with a conductive material to form a via;

    forming a passivation layer over the frontside of the substrate, the passivation layer containing electrical interconnection component that electrically couples the first electrical element to the via;

    bonding a carrier substrate to the substrate, the passivation layer being disposed between the substrate and the carrier substrate;

    removing, after bonding the carrier substrate, a portion of the backside of the substrate to expose the via;

    thereafter removing the carrier substrate; and

    electrically coupling the first electrical element to a second element on the backside through the via.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×