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Technique for the growth of planar semi-polar gallium nitride

  • US 8,524,012 B2
  • Filed: 01/24/2012
  • Issued: 09/03/2013
  • Est. Priority Date: 03/10/2005
  • Status: Active Grant
First Claim
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1. A device, comprising:

  • a semi-polar III-nitride layer, wherein;

    the semi-polar oriented III-nitride layer has a surface area of at least 10 mm by 10 mm,the surface area has a semi-polar orientation, andthe semi-polar III-nitride layer has a crystal quality suitable for subsequent growth of a semi-polar device layer structure on the surface area.

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