Technique for the growth of planar semi-polar gallium nitride
First Claim
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1. A device, comprising:
- a semi-polar III-nitride layer, wherein;
the semi-polar oriented III-nitride layer has a surface area of at least 10 mm by 10 mm,the surface area has a semi-polar orientation, andthe semi-polar III-nitride layer has a crystal quality suitable for subsequent growth of a semi-polar device layer structure on the surface area.
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Abstract
A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate'"'"'s surface. The planar films and substrates are: (1) {1011} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {1013} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {1122} gallium nitride (GaN) grown on a {1100} sapphire substrate, and (4) {1013} gallium nitride (GaN) grown on a {1100} sapphire substrate.
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Citations
26 Claims
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1. A device, comprising:
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a semi-polar III-nitride layer, wherein; the semi-polar oriented III-nitride layer has a surface area of at least 10 mm by 10 mm, the surface area has a semi-polar orientation, and the semi-polar III-nitride layer has a crystal quality suitable for subsequent growth of a semi-polar device layer structure on the surface area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method of fabricating a device, comprising:
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growing a semi-polar III-nitride layer, wherein; the semi-polar oriented III-nitride layer has a surface area of at least 10 mm by 10 mm, the surface area has a semi-polar orientation, and the semi-polar III-nitride layer is suitable for subsequent growth of a semi-polar device layer structure on the surface area. - View Dependent Claims (24, 25)
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26. A device structure, comprising:
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a semi-polar III-nitride layer, wherein; the semi-polar oriented III-nitride layer has a surface area of at least 10 mm by 10 mm, the surface area has a semi-polar orientation, and a III-nitride light emitting diode (LED) structure deposited on the surface area.
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Specification