Methods of forming semiconductor devices with self-aligned contacts and low-k spacers and the resulting devices
First Claim
1. A method, comprising:
- forming a sacrificial gate structure above a semiconducting substrate, said sacrificial gate structure comprising at least a sacrificial gate electrode that has a plurality of sidewalls;
forming at least one sacrificial sidewall spacer adjacent said sacrificial gate electrode;
performing at least one etching process to remove at least a portion of said sacrificial sidewall spacer and thereby expose at least a portion of said sidewalls of said sacrificial gate electrode;
after performing said etching process, forming a liner layer on said exposed sidewalls of said sacrificial gate electrode;
forming at least one layer of sacrificial gap fill material above said liner layer;
performing at least one process operation to expose an upper surface of said sacrificial gate electrode;
after exposing said upper surface of said sacrificial gate electrode, removing at least said sacrificial gate electrode to thereby define a gate cavity that is laterally defined by said liner layer;
forming a replacement gate structure in said gate cavity;
after forming said replacement gate structure, removing said at least one layer of sacrificial gap fill material; and
forming a low-k sidewall spacer adjacent said liner layer.
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Accused Products
Abstract
One illustrative method disclosed herein includes removing a portion of a sacrificial sidewall spacer to thereby expose at least a portion of the sidewalls of a sacrificial gate electrode and forming a liner layer on the exposed sidewalls of the sacrificial gate electrode. In this example, the method also includes forming a sacrificial gap fill material above the liner layer, exposing and removing the sacrificial gate electrode to thereby define a gate cavity that is laterally defined by the liner layer, forming a replacement gate structure, removing the sacrificial gap fill material and forming a low-k sidewall spacer adjacent the liner layer. A device is also disclosed that includes a gate cap layer, a layer of silicon nitride or silicon oxynitride positioned on each of two upstanding portions of a gate insulation layer and a low-k sidewall spacer positioned on the layer of silicon nitride or silicon oxynitride.
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Citations
18 Claims
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1. A method, comprising:
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forming a sacrificial gate structure above a semiconducting substrate, said sacrificial gate structure comprising at least a sacrificial gate electrode that has a plurality of sidewalls; forming at least one sacrificial sidewall spacer adjacent said sacrificial gate electrode; performing at least one etching process to remove at least a portion of said sacrificial sidewall spacer and thereby expose at least a portion of said sidewalls of said sacrificial gate electrode; after performing said etching process, forming a liner layer on said exposed sidewalls of said sacrificial gate electrode; forming at least one layer of sacrificial gap fill material above said liner layer; performing at least one process operation to expose an upper surface of said sacrificial gate electrode; after exposing said upper surface of said sacrificial gate electrode, removing at least said sacrificial gate electrode to thereby define a gate cavity that is laterally defined by said liner layer; forming a replacement gate structure in said gate cavity; after forming said replacement gate structure, removing said at least one layer of sacrificial gap fill material; and forming a low-k sidewall spacer adjacent said liner layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method, comprising:
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forming a sacrificial gate structure above a semiconducting substrate, said sacrificial gate structure comprising at least a sacrificial gate electrode that has a plurality of sidewalls; forming at least one sacrificial sidewall spacer on said sacrificial gate electrode; performing at least one etching process to remove at least a portion of said sacrificial sidewall spacer and thereby expose a portion of said sidewalls of said sacrificial gate electrode; after performing said etching process, forming a liner layer comprised of silicon nitride or silicon oxynitride on said exposed sidewalls of said sacrificial gate electrode; forming at least one layer of sacrificial gap fill material above said liner layer; performing at least one process operation to expose an upper surface of said sacrificial gate electrode; after exposing said upper surface of said sacrificial gate electrode, removing at least said sacrificial gate electrode to thereby define a gate cavity that is laterally defined by said liner layer; forming a replacement gate structure in said gate cavity; after forming said replacement gate structure, removing said at least one layer of sacrificial gap fill material; and forming a low-k sidewall spacer on said liner layer, wherein said low-k sidewall spacer is comprised of a material having a dielectric constant less than 7. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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Specification