Active matrix display device with bottom gate zinc oxide thin film transistor
First Claim
Patent Images
1. An active matrix display device comprising:
- a thin film transistor over a substrate, the thin film transistor comprising;
a gate electrode;
a semiconductor film comprising zinc oxide over the gate electrode with a gate insulating film interposed therebetween;
an auxiliary wire over the substrate;
a first insulating film comprising silicon on the semiconductor film;
a second insulating film comprising a resin material on the first insulating film; and
a pixel electrode formed over the second insulating film and electrically connected to the thin film transistor,wherein a corner of a portion where a width of the auxiliary wire changes is rounded.
0 Assignments
0 Petitions
Accused Products
Abstract
To provide a semiconductor device in which a defect or fault is not generated and a manufacturing method thereof even if a ZnO semiconductor film is used and a ZnO film to which an n-type or p-type impurity is added is used for a source electrode and a drain electrode. The semiconductor device includes a gate insulating film formed by using a silicon oxide film or a silicon oxynitride film over a gate electrode, an Al film or an Al alloy film over the gate insulating film, a ZnO film to which an n-type or p-type impurity is added over the Al film or the Al alloy film, and a ZnO semiconductor film over the ZnO film to which an n-type or p-type impurity is added and the gate insulating film.
-
Citations
29 Claims
-
1. An active matrix display device comprising:
-
a thin film transistor over a substrate, the thin film transistor comprising; a gate electrode; a semiconductor film comprising zinc oxide over the gate electrode with a gate insulating film interposed therebetween; an auxiliary wire over the substrate; a first insulating film comprising silicon on the semiconductor film; a second insulating film comprising a resin material on the first insulating film; and a pixel electrode formed over the second insulating film and electrically connected to the thin film transistor, wherein a corner of a portion where a width of the auxiliary wire changes is rounded. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. An active matrix display device comprising:
-
a gate wire over a substrate; a thin film transistor over the substrate, the thin film transistor comprising; a gate electrode; a semiconductor film comprising zinc oxide over the gate electrode with a gate insulating film interposed therebetween; a conductive film comprising an oxide in contact with the semiconductor film; and a metal film in contact with the conductive film; a first insulating film comprising silicon on the semiconductor film; a second insulating film comprising a resin material on the first insulating film; and a pixel electrode over the second insulating film and electrically connected to the thin film transistor, wherein the conductive film is between the semiconductor film and the metal film, and wherein a corner of a portion where a width of the gate wire changes is rounded. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
-
19. An active matrix display device comprising:
-
a thin film transistor over a substrate, the thin film transistor comprising; a gate electrode over the substrate; a gate insulating film over the gate electrode; a metal film over the substrate; a conductive film comprising an oxide on and in contact with the metal film; and a semiconductor film comprising zinc oxide on and in contact with the conductive film and the gate insulating film; a source wire over the substrate, the source wire comprising; a first layer formed from a same layer as the metal film; and a second layer formed from a same layer as the conductive film; a first insulating film comprising silicon on the semiconductor film; a second insulating film comprising a resin material on the first insulating film; and a pixel electrode over the second insulating film and electrically connected to the thin film transistor, wherein a corner of a portion where a width of the source wire changes is rounded. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsAkimoto, Kengo
-
Primary Examiner(s)MONTALVO, EVA Y
-
Application NumberUS12/417,682Publication NumberTime in Patent Office1,614 DaysField of Search257/184, 257/257, 257/290, 257/368US Class Current257/43CPC Class CodesH01L 27/1214 comprising a plurality of T...H01L 27/1225 with semiconductor material...H01L 27/1255 integrated with passive dev...H01L 29/41733 for thin film transistors w...H01L 29/45 Ohmic electrodesH01L 29/4908 for thin film semiconductor...H01L 29/78621 with LDD structure or an ex...H01L 29/7869 having a semiconductor body...
