×

Active matrix display device with bottom gate zinc oxide thin film transistor

  • US 8,525,165 B2
  • Filed: 04/03/2009
  • Issued: 09/03/2013
  • Est. Priority Date: 11/15/2005
  • Status: Expired due to Fees
First Claim
Patent Images

1. An active matrix display device comprising:

  • a thin film transistor over a substrate, the thin film transistor comprising;

    a gate electrode;

    a semiconductor film comprising zinc oxide over the gate electrode with a gate insulating film interposed therebetween;

    an auxiliary wire over the substrate;

    a first insulating film comprising silicon on the semiconductor film;

    a second insulating film comprising a resin material on the first insulating film; and

    a pixel electrode formed over the second insulating film and electrically connected to the thin film transistor,wherein a corner of a portion where a width of the auxiliary wire changes is rounded.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×