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Semiconductor device and manufacturing method thereof

  • US 8,525,173 B2
  • Filed: 03/01/2011
  • Issued: 09/03/2013
  • Est. Priority Date: 05/09/2000
  • Status: Expired due to Fees
First Claim
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1. A liquid crystal display device comprising:

  • a first substrate;

    a thin film transistor over the first substrate, the thin film transistor comprising;

    a gate electrode over the first substrate;

    a semiconductor film having a channel forming region over the gate electrode;

    a source electrode and a drain electrode over the semiconductor film;

    a pixel electrode electrically connected to the thin film transistor;

    a first wiring over the first substrate;

    a second wiring over the first wiring;

    a convex portion overlapped with the first wiring;

    a second substrate opposite to the first substrate; and

    a light shielding portion located between the thin film transistor and the second substrate,wherein the first wiring comprises a same material as a material of the gate electrode,wherein each of the second wiring and the convex portion comprises a same material as a material of the source electrode and the drain electrode,wherein the second wiring has a lamination structure comprising at least two conductive layers,wherein the convex portion is island-shaped, andwherein the channel forming region overlaps with the light shielding portion, and does not overlap with the pixel electrode.

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