Ultraviolet light emitting diode devices and methods for fabricating the same
First Claim
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1. An ultraviolet light emitting diode device, wherein:
- the ultraviolet light emitting diode device comprising AlN nucleating layers, an intrinsic AlGaN epitaxial layer, an AlGaN barrier layer of a first conductivity type, an active region, a first AlGaN barrier layer of a second conductivity type, a second AlGaN barrier layer of the second conductivity type and a GaN cap layer of the second conductivity type grown in sequence on a substrate;
a window is disposed in the GaN cap layer of the second conductivity type so as to emit the light generated; and
the window penetrates through the GaN cap layer of the second conductivity type and the second AlGaN barrier layer and reaches the first AlGaN barrier layer.
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Abstract
A UV LED device and the method for fabricating the same are provided. The device has aluminum nitride nucleating layers, an intrinsic aluminum gallium nitride epitaxial layer, an n-type aluminum gallium nitride barrier layer, an active region, a first p-type aluminum gallium nitride barrier layer, a second p-type aluminum gallium nitride barrier layer, and a p-type gallium nitride cap layer arranged from bottom to top on a substrate. A window region is etched in the p-type gallium nitride cap layer for emitting the light generated.
3 Citations
10 Claims
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1. An ultraviolet light emitting diode device, wherein:
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the ultraviolet light emitting diode device comprising AlN nucleating layers, an intrinsic AlGaN epitaxial layer, an AlGaN barrier layer of a first conductivity type, an active region, a first AlGaN barrier layer of a second conductivity type, a second AlGaN barrier layer of the second conductivity type and a GaN cap layer of the second conductivity type grown in sequence on a substrate; a window is disposed in the GaN cap layer of the second conductivity type so as to emit the light generated; and the window penetrates through the GaN cap layer of the second conductivity type and the second AlGaN barrier layer and reaches the first AlGaN barrier layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An ultraviolet light emitting diode device, wherein:
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the ultraviolet light emitting diode device comprising AN nucleating layers, an intrinsic AlGaN epitaxial layer, an AlGaN barrier layer of a first conductivity type, an active region, a first AlGaN barrier layer of a second conductivity type, a second AlGaN barrier layer of the second conductivity type and a GaN cap layer of the second conductivity type grown in sequence on a substrate; a window is disposed in the GaN cap layer of the second conductivity type so as to emit the light generated; and the window has one of shapes of substantially cone, semi-sphere and cylindrical; and wherein; if the window has a substantially cone shape, the bottom of the window is located at two-thirds of the thickness of the first AlGaN barrier layer; if the window has a substantially semi-sphere shape, the bottom of the window is located at four-fifths of the thickness of the first AlGaN barrier layer; and if the window has a substantially cylindrical shape, the bottom of the window is at three-fourths of the thickness of the first AlGaN barrier layer. - View Dependent Claims (8, 9, 10)
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Current AssigneeXidian University
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Original AssigneeXidian University
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InventorsHao, Yue, Yang, Ling, Ma, Xiaohua, Zhou, Xiaowei, Li, Peixian
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Primary Examiner(s)REAMES, MATTHEW L
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Application NumberUS13/262,049Publication NumberTime in Patent Office1,469 DaysField of Search257/97, 257/E33.034US Class Current257/97CPC Class CodesH01L 33/06 within the light emitting r...H01L 33/20 with a particular shape, e....
