Light-emitting diode with non-metallic reflector

• US 8,525,200 B2
• Filed: 11/12/2008
• Issued: 09/03/2013
• Est. Priority Date: 08/18/2008
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chen, Ding-Yuan, Chiou, Wen-Chih, Yu, Chen-Hua
• Primary Examiner(s): YUSHIN, NIKOLAY K
• Application Number:
  US12/269,497
• Publication Number:
  US 20100038661A1
• Time in Patent Office: 1,756 Days
• Field of Search: 257/98, 257/99, 257/79, 257/E33.01, 257/13, 257/E33.056, 257/E33.058, 438/29, 438/79, 438/98, 438/22, 438/46
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

Abstract

A light-emitting diode (LED) device is provided. The LED device has a substrate, a reflective structure over the substrate, and an LED structure over the reflective structure. The reflective structure is formed of non-metallic materials. In one embodiment, the reflective structure is formed of alternating layers of different non-metallic materials having different refractive indices. In another embodiment, the reflective structure is formed of alternating layers of high-porosity silicon and low-porosity silicon. In yet another embodiment, the reflective structure is formed of silicon dioxide, which may allow the use of fewer layers. The reflective structure may be formed directly on the same substrate as the LED structure or formed on a separate substrate and then bonded to the LED structure.

Claims

1. A light-emitting diode (LED) device comprising:

a substrate;

a non-metallic reflective layer over a surface of the substrate, the non-metallic reflective

layer being conductive and comprising alternating layers of Si_xGe_1-x and Si_xC_1-x;

a plurality of thermally-conductive vias extending through the non-metallic reflective layer;

a metal layer disposed over the non-metallic reflective layer; and

an LED structure disposed over the metal layer, the LED structure being coupled to the non-metallic reflective layer through the metal layer.

2. The LED device of claim 1, wherein the non-metallic reflective layer comprises alternating layers of a first material and a second material, each of the first material and the second material being a non-metallic material.

3. The LED device of claim 1, wherein the metal layer has a conductivity type the same as an upper layer of the LED structure.

4. The LED device of claim 1, wherein the non-metallic reflective layer comprises silicon dioxide.

5. The LED device of claim 1, wherein the non-metallic reflective layer comprises an omni-directional reflector.

6. A light-emitting diode (LED) device comprising:

a substrate;

a reflective structure on a first side of the substrate, the reflective structure comprising at least a first material and a second material, the first material and the second material having different refractive indices and being non-metallic, wherein the reflective structure comprises alternating layers of about 95% porosity silicon and about 30% porosity silicon;

a metal layer disposed over the reflective structure; and

an LED structure formed over the metal layer;

wherein;

the LED structure includes an active layer disposed between a first semiconductor layer and a second semiconductor layer, the first and second semiconductor layers having different types of conductivity; and

the reflective structure is configured to have a same type of conductivity as one of the first and second semiconductor layers disposed closer to the reflective structure.

7. The LED device of claim 6, wherein the LED device is a vertical LED device.

8. The LED device of claim 6, further comprising thermal vias extending through the reflective structure.

9. The LED device of claim 6, wherein the reflective structure comprises silicon dioxide.

10. A method of forming a light-emitting diode (LED), the method comprising:

forming a reflective structure on a first substrate, the reflective structure being a conductive, non-metallic structure;

forming an LED structure on a second substrate;

forming a metal layer over the LED structure;

bonding the metal layer to the reflective structure using a thermally conductive material other than an oxide; and

removing the second substrate.

11. The method of claim 10, wherein the reflective structure comprises silicon dioxide.

12. The method of claim 10, wherein the forming the reflective structure comprises forming alternating layers of a first non-metallic layer and a second non-metallic layer.

13. The method of claim 10, wherein the forming the reflective structure comprises forming alternating layers of a high-porosity silicon and a low-porosity silicon.

14. The method of claim 10, wherein the reflective structure comprises an omni-directional reflector.

15. The method of claim 10, wherein the reflective structure comprises alternating layers of Si and Si_xGe_1-x, Si and Si_xGe_1-x, and Si_xC_1-x, or SiC and GaN.

16. The method of claim 10, wherein the thermally conductive material comprises Au, Ni, or Cu.