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Semiconductor structure having a wetting layer

  • US 8,525,232 B2
  • Filed: 08/10/2011
  • Issued: 09/03/2013
  • Est. Priority Date: 08/10/2011
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a semiconductor substrate; and

    a metal gate structure formed in a trench or via on the semiconductor substrate, the metal gate structure comprising;

    a gate dielectric;

    a wetting layer selected from the group consisting of cobalt and nickel on the gate dielectric lining the trench or via and having an oxygen content of no more than about 200 ppm (parts per million) oxygen; and

    an aluminum layer to fill the remainder of the trench or via.

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