Super junction device with deep trench and implant
First Claim
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1. A device, comprising:
- a substrate;
a plurality of first regions of a first conductivity type formed on the substrate; and
a plurality of second regions of a second conductivity type formed on the substrate and interleaved with the plurality of first regions, wherein each of the second regions includes;
an implant region implanted between the substrate and a trenched region;
a conductive column of the second conductivity type formed into the trenched region; and
an insulative barrier configured to insulate the conductive column from the implant region and from the first regions adjacent to the second region.
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Abstract
RESURF effect devices with both relatively deep trenches and relatively deep implants are described herein. Also, methods of fabricating such devices are described herein. A RESURF effect device may include alternating regions of first and second conductivity types where each of the second regions includes an implant region formed into a trench region of the second region.
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Citations
13 Claims
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1. A device, comprising:
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a substrate; a plurality of first regions of a first conductivity type formed on the substrate; and a plurality of second regions of a second conductivity type formed on the substrate and interleaved with the plurality of first regions, wherein each of the second regions includes; an implant region implanted between the substrate and a trenched region; a conductive column of the second conductivity type formed into the trenched region; and an insulative barrier configured to insulate the conductive column from the implant region and from the first regions adjacent to the second region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification