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Super junction device with deep trench and implant

  • US 8,525,260 B2
  • Filed: 03/19/2010
  • Issued: 09/03/2013
  • Est. Priority Date: 03/19/2010
  • Status: Active Grant
First Claim
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1. A device, comprising:

  • a substrate;

    a plurality of first regions of a first conductivity type formed on the substrate; and

    a plurality of second regions of a second conductivity type formed on the substrate and interleaved with the plurality of first regions, wherein each of the second regions includes;

    an implant region implanted between the substrate and a trenched region;

    a conductive column of the second conductivity type formed into the trenched region; and

    an insulative barrier configured to insulate the conductive column from the implant region and from the first regions adjacent to the second region.

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