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Device with through-silicon via (TSV) and method of forming the same

  • US 8,525,343 B2
  • Filed: 09/28/2010
  • Issued: 09/03/2013
  • Est. Priority Date: 09/28/2010
  • Status: Active Grant
First Claim
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1. A device, comprising:

  • a silicon substrate having a first surface and a second surface opposite the first surface;

    a through-silicon via (TSV) structure passing through the silicon substrate from the first surface to the second surface; and

    an insulation structure formed between the silicon substrate and the TSV structure,wherein a first interface between the insulation structure and the silicon substrate from the first surface to the second surface has an interface roughness with a peak-to-valley height less than 5 nm, and a second interface between the insulation structure and the TSV structure from the first surface to the second surface has an interface roughness with a peak-to-valley height less than 5 nm.

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