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Substrate processing apparatus and method

  • US 8,528,499 B2
  • Filed: 03/27/2009
  • Issued: 09/10/2013
  • Est. Priority Date: 03/27/2008
  • Status: Active Grant
First Claim
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1. A substrate processing method, in which a source gas is supplied to a substrate disposed on a support member, a heater being installed in the support member, to deposit a film on a surface of the substrate, the method comprising:

  • depositing a dummy film using a flat-type shower head installed above the support member on a dummy substrate, the flat-type shower head having a plurality of injection holes and outlets of the injection holes having a substantially uniform height, and the injection holes supplying the source gas toward the support member;

    measuring thickness distribution of the dummy film; and

    depositing a film on a substrate using a non-flat-type shower head that is installed above the support member and has a plurality of first injection holes and a plurality of second injection holes, outlets of the second injection holes being positioned to be closer to the substrate than outlets of the first injection holes, and the first injection holes and the second injection holes supplying the source gas toward the support member,wherein the second injection holes are positioned to a part corresponding to a relatively thicker region of the dummy film than other regions of the dummy film and the first injection holes are positioned to the other regions of the dummy film.

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