Solution composition and method of forming thin film and method of manufacturing thin film transistor using the solution composition
First Claim
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1. A solution composition for an oxide thin film, comprising:
- a zinc-containing first compound;
an indium-containing second compound; and
a third compound comprising at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), lanthanum (La), silicon (Si), vanadium (V), niobium (Nb), and yttrium (Y),wherein the atomic ratio of zinc in the zinc-containing first compound and indium in the indium-containing second compound ranges from about 1;
10 to about 10;
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Abstract
Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.
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Citations
17 Claims
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1. A solution composition for an oxide thin film, comprising:
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a zinc-containing first compound; an indium-containing second compound; and a third compound comprising at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), lanthanum (La), silicon (Si), vanadium (V), niobium (Nb), and yttrium (Y), wherein the atomic ratio of zinc in the zinc-containing first compound and indium in the indium-containing second compound ranges from about 1;
10 to about 10;
1. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a thin film, comprising:
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preparing a solution composition comprising a zinc-containing first compound, an indium-containing second compound, and a third compound comprising at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y); applying the solution composition to a substrate; and heat-treating the solution composition applied to the substrate to provide an oxide thin film, wherein the atomic ratio of zinc in the zinc-containing first compound and indium in the indium-containing second compound ranges from about 1;
10 to about 10;
1. - View Dependent Claims (10)
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11. A method of manufacturing a thin film transistor comprising:
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providing a first electrode; applying a solution composition including a zinc-containing first compound, an indium-containing second compound, and a third compound including at least one metal or metalloid selected from hafnium (Hf), magnesium (Mg), tantalum (Ta), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), or yttrium (Y), at a position overlapping the first electrode; heat-treating the solution composition to provide an oxide semiconductor thin film; providing a second electrode that is electrically connected with the oxide semiconductor thin film; and annealing the oxide semiconductor thin film after providing the first electrode, the oxide semiconductor thin film, and the second electrode, wherein the atomic ratio of zinc in the zinc-containing first compound and indium in the indium-containing second compound ranges from about 1;
10 to about 10;
1. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification