Process for forming thin film encapsulation layers

• US 8,529,990 B2
• Filed: 11/23/2011
• Issued: 09/10/2013
• Est. Priority Date: 09/26/2007
• Status: Active Grant

• Current Assignee: Eastman Kodak Company
• Original Assignee: Eastman Kodak Company
• Inventors: Fedorovskaya, Elena A., Boroson, Michael L., Levy, David H., Agostinelli, John A.
• Primary Examiner(s): Cleveland, Michael
• Assistant Examiner(s): Murata, Austin
• Application Number:
  US13/303,513
• Publication Number:
  US 20120070942A1
• Time in Patent Office: 657 Days
• Field of Search: 427/160
• US Class Current: 427/160
• CPC Class Codes: B05D 5/00 Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
• CPC Class Codes: C23C 16/403 of aluminium, magnesium or beryllium
• CPC Class Codes: C23C 16/405 of refractory metals or yttrium
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/873 Encapsulations

Abstract

A thin film environmental barrier encapsulation process includes providing an electronic device on a substrate, a first reactant gaseous material, a second reactant gaseous material, an inert gaseous material; and a delivery head through which the reactant gaseous materials and the inert gaseous material are simultaneously directed toward the electronic device and the substrate. One or more of the reactant gaseous materials and the inert gaseous material flows through the delivery head. The flow of the one or more of the reactant gaseous materials and the inert gaseous material generates a pressure to create a gas fluid bearing that maintains a substantially uniform distance between the delivery head and the substrate. Relative motion between the delivery head and the substrate causes the second reactant gaseous material to react with at least a portion of the electronic device and the substrate that has been treated with the first reactant gaseous material.

Claims

1. A process of encapsulating an electronic device with a thin film comprising:

providing an electronic device on a substrate;

providing a plurality of gaseous material sources including a first source of a first reactant gaseous material, a second source of a second reactant gaseous material, and a third source of a inert gaseous material;

providing a delivery head in fluid communication with the gaseous material sources through a plurality of inlet ports, the first gaseous material source being connected to a first inlet port, the second gaseous material source being connected to a second inlet port, the third gaseous material source being connected to a third inlet port, the delivery head including an output face and a first plurality of elongated substantially parallel emissive channels connected in fluid communication with the first inlet port, a second plurality of elongated substantially parallel emissive channels connected to the second inlet port, and a third plurality of elongated substantially parallel emissive channels connected to the third inlet port, at least one of the third elongated emissive channels being positioned to separate at least one of the first elongated emissive channels and at least one of the second elongated emissive channels;

causing one or more of the first reactant gaseous material, the second reactant gaseous material, and the inert gaseous material to flow through the first elongated emissive channel, the second elongated emissive channel, and the third elongated emissive channel, respectively, of the delivery head, the flow including a pressure, the pressure generated by the flow of the one or more of the first reactant gaseous material, the second reactant gaseous material, and the third inert gaseous materials creating a gas fluid bearing that maintains a substantially uniform distance between the output face of the delivery head and the substrate;

simultaneously directing the first reactant gaseous material, the second reactant gaseous material, and the inert gaseous material to flow through the first elongated emissive channel, the second elongated emissive channel, and the third elongated emissive channel, respectively, of the delivery head toward the electronic device and the substrate;

causing a relative motion between the delivery head and the substrate to cause the second reactant gaseous material to react with at least a portion of the electronic device and a portion of the substrate that has been treated with the first reactant gaseous material to create a thin film encapsulation package including a thin film over at least one of the portion of the electronic device and the portion of the substrate that has been treated with the first reactant gaseous material, the encapsulation package providing at least the electronic device with an environmental barrier layer.

2. The process of claim 1, wherein creating the gas fluid bearing includes causing the delivery head to float above the substrate.

3. The process of claim 1, wherein creating the gas fluid bearing includes causing the substrate to levitate above the delivery head.

4. The process of claim 1, the thin film of the encapsulation package being a first thin film, the process further comprising:

creating a second thin film of the encapsulation package over the first thin film by substituting one of the first reactant gaseous material and the second reactant gaseous material with a third reactant gaseous and repeating the process of claim 1.

5. The process of claim 1, the thin film of the encapsulation package being a first thin film, the process further comprising:

creating a second thin film of the encapsulation package over the first thin film by substituting the first reactant gaseous material with a third reactant gaseous material and substituting the second reactant gaseous material with a fourth reactant gaseous material and repeating the process of claim 1.

6. The process of claim 1, wherein one of the first reactant gaseous material and the second reactant gaseous material include a mixture of reactant gaseous materials that react with the other of the first reactant gaseous material and the second reactant gaseous material.

7. The process of claim 6, wherein the mixture of the reactant gaseous materials is varied during deposition.

8. The process of claim 1, wherein causing one or more of the first reactant gaseous material, the second reactant gaseous material, and the inert gaseous material to flow through the first elongated emissive channel, the second elongated emissive channel, and the third elongated emissive channel, respectively, of the delivery head;

simultaneously directing the first reactant gaseous material, the second reactant gaseous material, and the inert gaseous material to flow through the first elongated emissive channel, the second elongated emissive channel, and the third elongated emissive channel, respectively, of the delivery head toward the electronic device and the substrate; and

causing relative motion between the delivery head and the substrate to cause the second reactant gaseous material to react with at least a portion of the electronic device and a portion of the substrate that has been treated with the first reactant gaseous material occurs at or near atmospheric pressure.

9. The process of claim 8, wherein causing one or more of the first reactant gaseous material, the second reactant gaseous material, and the inert gaseous material to flow through the first elongated emissive channel, the second elongated emissive channel, and the third elongated emissive channel, respectively, of the delivery head;

simultaneously directing the first reactant gaseous material, the second reactant gaseous material, and the inert gaseous material to flow through the first elongated emissive channel, the second elongated emissive channel, and the third elongated emissive channel, respectively, of the delivery head toward the electronic device and the substrate; and

causing relative motion between the delivery head and the substrate to cause the second reactant gaseous material to react with at least a portion of the electronic device and a portion of the substrate that has been treated with the first reactant gaseous material occurs in an unsealed environment.

10. The process of claim 1, wherein causing one or more of the first reactant gaseous material, the second reactant gaseous material, and the inert gaseous material to flow through the first elongated emissive channel, the second elongated emissive channel, and the third elongated emissive channel, respectively, of the delivery head;

simultaneously directing the first reactant gaseous material, the second reactant gaseous material, and the inert gaseous material to flow through the first elongated emissive channel, the second elongated emissive channel, and the third elongated emissive channel, respectively, of the delivery head toward the electronic device and the substrate; and

causing relative motion between the delivery head and the substrate to cause the second reactant gaseous material to react with at least a portion of the electronic device and a portion of the substrate that has been treated with the first reactant gaseous material occurs in an unsealed environment.