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Method of forming a bi-directional transistor with by-pass path

  • US 8,530,284 B2
  • Filed: 12/13/2011
  • Issued: 09/10/2013
  • Est. Priority Date: 03/06/2006
  • Status: Active Grant
First Claim
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1. A method of forming a bi-directional transistor comprising:

  • forming a first MOS transistor on a semiconductor substrate of a first conductivity type wherein the first MOS transistor is a vertical transistor formed on the semiconductor substrate;

    forming a body region of the first MOS transistor on a surface of the semiconductor substrate and isolated from a first current carrying electrode region of the first MOS transistor by a first P-N junction and isolated from a second current carrying electrode region of the first MOS transistor by a second P-N junction;

    forming a second MOS transistor coupled to selectively couple the body region of the first MOS transistor to the first current carrying electrode of the first MOS transistor wherein the second MOS transistor is a vertical MOS transistor formed on the semiconductor substrate; and

    forming a third MOS transistor on a surface of the semiconductor substrate and coupled to form a current flow path in parallel with the first MOS transistor.

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